Rowan-Classes/7th-Semester-Fall-2024/VLSI/homework/homework-5/homework-5.md

Homework 5 - Aidan Sharpe

Problem 1

If the gate oxide thickness in a SiO$_2$-based structure is 2[nm], what would be the thickness of an HfO$_2$-based dielectric providing the same capacitance?

k_\text{SiO2} = 3.9

k_\text{HfO2} = 20

2\text{[nm]} \frac{2.0}{3.9} = \boxed{10.26\text{[nm]}}

Problem 2

Using the SUBM rules, clculate the minimum uncontacted and contacted transistor pitch.

Uncontacted

\lambda + 3\lambda + \lambda = \boxed{5\lambda}

Contacted

\lambda + 2\lambda + 2\lambda + 2\lambda + \lambda = \boxed{5\lambda}