Rowan-Classes/7th-Semester-Fall-2024/VLSI/labs/lab-1-2/lab-1-2.aux
2024-11-13 21:00:08 -05:00

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\relax
\providecommand\hyper@newdestlabel[2]{}
\providecommand\HyperFirstAtBeginDocument{\AtBeginDocument}
\HyperFirstAtBeginDocument{\ifx\hyper@anchor\@undefined
\global\let\oldnewlabel\newlabel
\gdef\newlabel#1#2{\newlabelxx{#1}#2}
\gdef\newlabelxx#1#2#3#4#5#6{\oldnewlabel{#1}{{#2}{#3}}}
\AtEndDocument{\ifx\hyper@anchor\@undefined
\let\newlabel\oldnewlabel
\fi}
\fi}
\global\let\hyper@last\relax
\gdef\HyperFirstAtBeginDocument#1{#1}
\providecommand\HyField@AuxAddToFields[1]{}
\providecommand\HyField@AuxAddToCoFields[2]{}
\abx@aux@refcontext{nty/global//global/global}
\abx@aux@cite{0}{VddNaming}
\abx@aux@segm{0}{0}{VddNaming}
\abx@aux@cite{0}{VLSICircuitsSystems}
\abx@aux@segm{0}{0}{VLSICircuitsSystems}
\abx@aux@cite{0}{VLSISystemDesign}
\abx@aux@segm{0}{0}{VLSISystemDesign}
\abx@aux@cite{0}{VLSISystemDesign}
\abx@aux@segm{0}{0}{VLSISystemDesign}
\@writefile{toc}{\contentsline {section}{\numberline {I}Introduction}{2}{section.1}\protected@file@percent }
\@writefile{toc}{\contentsline {section}{\numberline {II}NMOS Characteristics}{2}{section.2}\protected@file@percent }
\newlabel{eqn:nmos-shockley-first-order}{{1}{2}{NMOS Characteristics}{equation.2.1}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {1}{\ignorespaces Plot of Shockley first order model for an n-channel MOSFET}}{2}{figure.1}\protected@file@percent }
\newlabel{fig:nmos-shockley-first-order}{{1}{2}{Plot of Shockley first order model for an n-channel MOSFET}{figure.1}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {2}{\ignorespaces NMOS parametric test schematic}}{2}{figure.2}\protected@file@percent }
\newlabel{fig:nmos-iv-schematic}{{2}{2}{NMOS parametric test schematic}{figure.2}{}}
\@writefile{toc}{\contentsline {section}{\numberline {III}PMOS Characteristics}{2}{section.3}\protected@file@percent }
\@writefile{lof}{\contentsline {figure}{\numberline {3}{\ignorespaces Simulated relationship between input voltage and NMOS current}}{3}{figure.3}\protected@file@percent }
\newlabel{fig:nmos-simulation-results}{{3}{3}{Simulated relationship between input voltage and NMOS current}{figure.3}{}}
\newlabel{eqn:pmos-shockley-first-order}{{2}{3}{PMOS Characteristics}{equation.3.2}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {4}{\ignorespaces Plot of Shockley first order model for a p-channel MOSFET}}{3}{figure.4}\protected@file@percent }
\newlabel{fig:pmos-shockley}{{4}{3}{Plot of Shockley first order model for a p-channel MOSFET}{figure.4}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {5}{\ignorespaces PMOS parametric test schematic}}{3}{figure.5}\protected@file@percent }
\newlabel{fig:pmos-iv-schematic}{{5}{3}{PMOS parametric test schematic}{figure.5}{}}
\@writefile{toc}{\contentsline {section}{\numberline {IV}The Noise Margin}{3}{section.4}\protected@file@percent }
\@writefile{lof}{\contentsline {figure}{\numberline {6}{\ignorespaces Simulated relationship between input voltages and PMOS current}}{4}{figure.6}\protected@file@percent }
\newlabel{fig:pmos-iv-simulation}{{6}{4}{Simulated relationship between input voltages and PMOS current}{figure.6}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {7}{\ignorespaces The VTC and its derivative for a CMOS inverter with $w_p=240$[nm] and $w_n=120$[nm]}}{4}{figure.7}\protected@file@percent }
\newlabel{fig:inv_vtc}{{7}{4}{The VTC and its derivative for a CMOS inverter with $w_p=240$[nm] and $w_n=120$[nm]}{figure.7}{}}
\@writefile{lot}{\contentsline {table}{\numberline {I}{\ignorespaces Important VTC voltages}}{4}{table.1}\protected@file@percent }
\newlabel{tbl:vtc-voltages}{{I}{4}{Important VTC voltages}{table.1}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {8}{\ignorespaces Inverter VTC for different widths of the PMOS}}{4}{figure.8}\protected@file@percent }
\newlabel{fig:inv-parametric-vtc}{{8}{4}{Inverter VTC for different widths of the PMOS}{figure.8}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {9}{\ignorespaces $V_{OH}$ (green), $V_{IH}$ (yellow), $V_{OL}$ (cyan), and $V_{IL}$ (red) as a function of $w_p$.}}{4}{figure.9}\protected@file@percent }
\newlabel{fig:inv-parametric-nm-voltages}{{9}{4}{$V_{OH}$ (green), $V_{IH}$ (yellow), $V_{OL}$ (cyan), and $V_{IL}$ (red) as a function of $w_p$}{figure.9}{}}
\@writefile{lof}{\contentsline {figure}{\numberline {10}{\ignorespaces Resulting $\text {NM}_\text {L}$ (yellow) and $\text {NM}_\text {H}$ (red).}}{4}{figure.10}\protected@file@percent }
\newlabel{fig:inv-parametric-nm}{{10}{4}{Resulting $\text {NM}_\text {L}$ (yellow) and $\text {NM}_\text {H}$ (red)}{figure.10}{}}
\@writefile{toc}{\contentsline {section}{\numberline {V}Conclusion}{4}{section.5}\protected@file@percent }
\abx@aux@read@bbl@mdfivesum{F1E2E93D690B71984D244F8474E03772}
\abx@aux@defaultrefcontext{0}{VddNaming}{nty/global//global/global}
\abx@aux@defaultrefcontext{0}{VLSICircuitsSystems}{nty/global//global/global}
\abx@aux@defaultrefcontext{0}{VLSISystemDesign}{nty/global//global/global}
\gdef \@abspage@last{4}