# Homework 5 - Aidan Sharpe

## Problem 1
If the gate oxide thickness in a SiO$_2$-based structure is 2[nm], what would be the thickness of an HfO$_2$-based dielectric providing the same capacitance?

$k_\text{SiO2} = 3.9$

$k_\text{HfO2} = 20$
$$2\text{[nm]} \frac{2.0}{3.9} = \boxed{10.26\text{[nm]}}$$

## Problem 2
Using the SUBM rules, clculate the minimum uncontacted and contacted transistor pitch.

### Uncontacted

$\lambda + 3\lambda + \lambda = \boxed{5\lambda}$

### Contacted
$\lambda + 2\lambda + 2\lambda + 2\lambda + \lambda = \boxed{5\lambda}$