\documentclass{IEEEtran}

\usepackage{enumerate}

\title{Electronics I Glossary}
\author{Aidan Sharpe}

\begin{document}
\maketitle

\begin{abstract}
	This glossary contains definitions of useful terms in electronics. Please note that all terms are numbered except for the 26 NATO phonetic alphabet terms, which should be included in the total number of words.
\end{abstract}

% ========== A ============
\IEEEPARstart{A}{lfa}\\
\begin{enumerate}
	\item Active Region
	      \subitem The area of a transistor I-V curve where current no longer increases with an increased voltage. Power is dissipating, quiescence achieved \\
  \item Admittance
        \subitem The reciprocal of impedance denoted by $Y$; measured in siemens. \\
  \item Anode
	      \subitem A negatively polarized electrode, pin, or terminal.\\
	\item Astable Multivibrator
	      \subitem A positive feedback device that utilizes hysteresis and transient response to generate a tuneable square wave from a DC input. \\

	      % ========== B ============
	      \IEEEPARstart{B}{ravo}\\
	\item Bandpass Filter
	      \subitem A type of electronic filter that allows a selected range of frequencies to pass through. \\
	\item Bandreject Filter
	      \subitem A type of electronic filter that only blocks a selected range of frequencies from passing through. \\
	\item Bandwidth
	      \subitem The size of a defined range of frequencies. \\
	\item Base
	      \subitem The terminal of a bipolar junction transistor that controls the open and closed switch behavior.\\
	\item Biasing
	      \subitem A method to set voltages or currents in certain areas of a circuit to predetermined values. \\
	\item Bipolar
	      \subitem When + and - references are used at the rails. There is a common ground. \\
	\item Bipolar Junction Transistor
	      \subitem A type of semiconducing transistor.\\
	\item Biquadratic (Biquad)
	      \subitem $H(z)={\frac  {b_{0}+b_{1}z^{{-1}}+b_{2}z^{{-2}}}{a_{0}+a_{1}z^{{-1}}+a_{2}z^{{-2}}}}$\\
	\item Bode Plot
	      \subitem A logarithmic scale graph showing gain vs. frequency. \\
	\item Boltzmann's Constant ($k$ or $k_B$)
	      \subitem A constant ($1.380649 \times 10^{-23} J \cdotp K^{-1}$) that relates thermal energy to temperature. \\
	\item Brain Box
	      \subitem A colloquial term for an Engine Control Module (ECM).\\
	\item Buffer
	      \subitem A type of circuit isolator, i.e unity gain follower\\
	\item Bulk Capacitor
	      \subitem A capacitor used to prevent the output of a power supply from dropping too low. \\
	\item Bypass Capacitor
	      \subitem A Bypass Capacitor is a capacitance that shorts AC signals to ground, so that any AC noise that may be present on a DC signal is removed, producing a much cleaner and pure DC signal. Usually about $0.1 \mu F$ \\
	      \

	      % ========== C ============
	      \IEEEPARstart{C}{harlie}\\
	\item C
	      \subitem The speed of ligaht $3\times10^8 m/s$ \\
	\item Capacitor
	      \subitem A passive transient linear device that stores energy in an electric field.\\
	\item Cathode
	      \subitem A positively polarize electrode, pin, or terminal\\
	\item Center Tap Transformer
	      \subitem A tranformer that with a central comamon terminal: offering a positive and negative voltage on either side with equal magnitude.\\
	\item Clamp Diodes
	      \subitem A diode that is used to force a voltage on the anode.\\
	\item Charge of an Electron (q)
	      \subitem $1.602 \times 10^{-19} C$ \\
	\item Collector
	      \subitem The positive terminal of a BJT.\\
  \item Common Base Amplifier (Grounded Base)
    \subitem A basic BJT amplifier topology in which the base terminal is grounded. Current gain is unity and voltage gain is proportional to the value of the resistor between the rail and the output. \\
  \item Common Cathode Amplifier
    \subitem The tube equivelant of a common emitter amplifier. \\
  \item Common Collector Amplifier
    \subitem A basic single-stage BJT amplifier where the collector terminal is directly connected to a power rail or ground. On common collector amplifiers, voltage gain is very low (around unity) while current gain remains high around $h_{FE}$. \\
  \item Common Emitter Amplifier
    \subitem A simple single-stage BJT amplifier where the emmiter terminal is directly connected to a power rail or ground. They have high current gain and are usually used to amplify voltage. The output is typically phase-shifted by $180^\circ$. \\
  \item Common Grid
    \subitem The tube equivelant of a common base amplifier. \\
	\item Common Mode Rejection Ratio (CMRR)
	      \subitem $CMRR = 20\log_{10} \left(\frac{A_d}{A_{cm}}\right)$ \\
	\item Common Path
	      \subitem A shared (common) ground reference. \\
  \item Common Plate (Common Anode)
      \subitem The tube equivelant circuit of a common collector amplifier. \\
  \item Complementary Metal-Oxide-Semiconductor (CMOS)
    \subitem A type of MOSFET fabrication process that consists of N-type and P-type MOSFETs working together to create digital logic functions. It is the most VLSI technique. \\
	\item Controller Area Network (CAN Bus)
	      \subitem A standard device interconnect for multiplexed wiring. It is primarily used for wiring devices in vehicles. \\
  \item Conductance
        \subitem The reciprocal of resistance, denoted by $G$; measured in siemens. \\
  \item Control Grid
    \subitem The terminal of a tube device that controls the flow of electrons between the cathode and anode via an applied voltage. \\
	\item Coulomb (C)
	      \subitem The base SI unit of charge. \\
	\item Cut-off
	      \subitem The area of a transistor I-V curve where there is no current \\

	      % ========== D ============
	      \IEEEPARstart{D}{elta}\\
	\item Darlington pair
	      \subitem A pair of BJTs arranged in such a way that the total current gain is $\beta_{pair} = \beta_1 \cdotp \beta_2$. \\
	\item DC Restorer
	      \subitem Also known as a clamper, not to be confused with a voltage clamp, a DC restorer is a type of electronic circuit that shifts an AC signal to be completely positive or negative and maintains that $V_{max}$ or $V_{min}$ is 0.\\
  \item Delta Configuration ($\Delta$ Configuration)
        \subitem Three resistors arranged along the edges of a triangle. It can be transformed into a y-configuration using the following method: \\ \\
        $R_A = \frac{R_{AB}R_{AC}}{R_{AB}+R_{AC}+R_{BC}}$ \\ \\
        $R_B = \frac{R_{AB}R_{BC}}{R_{AB}+R_{AC}+R_{BC}}$ \\ \\
        $R_C = \frac{R_{AC}R_{BC}}{R_{AB}+R_{AC}+R_{BC}}$ \\
	\item Dielectric
	      \subitem A material that increases the affect of an electric field: often used to increase capacitance. Typically denoted by a $\kappa$ \\
	\item Differential Amplifier
    \subitem A two-input amplifying device with the transfer function: $V_o = A_d (V_+ - V_-) + A_c \frac{V_+ - V_-}{2}$, where $A_d$ is the differential gain, and $A_c$ is the common mode gain, \\
  \item Differential Pair
    \subitem A signal that is sent over two wires simultaneously as an inverted and non-inverted signal. It is used to increase signal voltage and reject common-mode noise. \\
      \State 
    \EndWhile
	\item Diode
	      \subitem A two terminal device that allows current to travel in only one direction.\\
	\item Diode Thermal Voltage
	      \subitem The voltage across a diode's PN junction caused by thermal motion of electrons. The thermal voltage is defined as $V_{T} = \frac{kT}{q}$; where $k$ is Boltzmann's constant, T is the temperature in Kelvin, and q is the absolute value of the charge of an electron. \\
	\item Distributed Parameter
	      \subitem A component with properties along a length or area rather than localized at a point. Must be used to model a component when the component is not much smaller than one wavelength. \\
	\item Drain
	      \subitem The terminal of a MOSFET where current flows out towards the common path. \\
  \item Dynatron Region (Tetrode Kink)
    \subitem The operating regime of a tetrode where the device exhibits negative resistance behavior. \\
  \\

	      % ========== E ============
	      \IEEEPARstart{E}{cho}\\
	\item Early Voltage ($V_A$)
		\subitem A characteristic property of a MOSFET device determined by the drain current and small signal output conductance. \\
  \item Edison Effect
    \subitem The thermionic effect by which electrons are transmitted from a hot cathode into a vacuum. \\
	\item Electromagnetic Interference {EMI}
	      \subitem Also called radio-frequency interference (RFI) when in the radio frequency spectrum, is a disturbance generated by an external source that affects an electrical circuit by electromagnetic induction, electrostatic coupling, conduction, or radiation.\\
	\item Electrolytic Capacitor
	      \subitem A type of polarized capacitor that uses an electrolyte and oxide layer to increase the dielectric constant.\\
	\item Electronic Design Automation (EDA)
	      \subitem Specialized software used to design and simulate electronic devices\\
	\item Emitter
	      \subitem The common path terminal of a BJT.\\
	\item Energy Assurance Plan (EAP)
	      \subitem A plan to make energy infrastructure more reliable and secure. \\

	      % ========== F ============
	      \IEEEPARstart{F}{oxtrot}\\
	\item Semiconductor Fabrication Plant (Fab)
	      \subitem A high-tech factory where semiconductor devices are manufactured. \\
	\item Farad
	      \subitem The base SI unit for capacitance. \\
	\item Filter
	      \subitem A circuit that only allows certain frequencies through.\\
	\item Flyback Diode
	      \subitem Also known as a clamp diode, a flyback diode is a use case for the clamping property of diodes, where the flyback voltage from an inductor is supressed. \\
	\item Forward Voltage
	      \subitem The voltage at which a semiconducing device begins to conduct.\\
	\item Fudge Factor
	      \subitem An extra term added to an equation to correct a result. \\
	\item Full Wave Rectifier
	      \subitem A device that restricts the output voltage to one pole and inverts the sign of the opposite pole.\\

	      % ========== G ============
	      \IEEEPARstart{G}{olf}\\
	\item Gain
	      \subitem A logarithmic measure of amplification.\\
	\item Gate-to-source Voltage ($V_{GS}$)
	      \subitem The voltage between the gate and the source of a MOSFET, responsible for controlling the switch state. \\
	\item General Interconnect
	      \subitem A two-way electrical connection between two circuit components. \\
	\item Giga-
	      \subitem The metric prefix meaning one billion ($10^{9}$) times the base unit.\\

	      % ========== H ============
	      \IEEEPARstart{H}{otel}\\
  \item Harmonic Distortion
    \subitem A type of distortion that creates large spikes in gain at the harmonics (natural number multiples) of a frequency. \\
	\item Half Wave Rectifier
	      \subitem A device that restricts the output voltage to one pole.\\
	\item High side switch
	      \subitem A type of switch where the switching device is between the supply and the rest of the circuit.\\
  \item High Pass Filter
        \subitem A filtering device that attenuates frequencies below a cut-off value ($\omega_0$) and does not affect signals above the cut off point. \\
	\item Hysteresis
	      \subitem Non-symmetric switching behavior of a circuit; the point of switching on is different from the point of switching off. \\
\\
	      % ========== I ============
	      \IEEEPARstart{I}{ndia}\\
  \item Impedance
    \subitem The complex measure of resistance. Impedance is denoted by $Z$, in ohms, and is defined by the complex relationship $Z = R + jX$. \\ 
	\item Insulated Gate Bipolar Transistor (IGBT)
	      \subitem A type of transistor designed for high current applications. \\
  \item Integrated Circuit (IC)
    \subitem A self-contained pre-manufactured circuit on a chip. They usually come in some kind of enclosure with an array of pins to interface with. \\
  \item Integrator
        \subitem An amplifier topology where the output voltage is the integral of the input signal with respect to time. \\
	\item Interconnect
	      \subitem A circuit component responsible for electrical connections between components. \\
	\item Interconnect Shielding
	      \subitem A component of an interconnect used to minimize EMI noise in the signal. \\
	\item Intermodulation Distortion
    \subitem A type of distortion caused by nonlinear signal processing behavior. It notably causes amplitude spikes at the harmonic frequencies as well as sum and difference frequencies of an input signal with multiple frequencies. \\
        \\

	      % ========== J ============
	      \IEEEPARstart{J}{uliett}\\
      \item Junction Field Effect Transistor (JFET)
        \subitem A simple type of FET device that can be used as a switch or combined with resistors to build an amplifier. \\
	      \\

	      % ========== K ============
	      \IEEEPARstart{K}{ilo}\\
	\item Kelvin Leads
	      \subitem A clip, often a crocodile clip, that connects a force-and-sense pair to measure very low resistances using four-terminal sensing.\\
	\item Kilo-
	      \subitem The metric prefix meaning one thousand ($10^{3}$) times the base unit.\\

	      % ========== L ============
	      \IEEEPARstart{L}{ima}\\
	\item Length of Channel (L)
	      \subitem The lenth of a MOSFET channel; the dimension spanning the source and drain. \\
  \item Light Emitting Diode (LED)
    \subitem A type of diode that emits light when the forward voltage is reached. The forward voltage, $V_F$ is depentdent on the color of the LED; specific values can be seen in the table below: \\

\begin{tabular}{|l|l|l|}
\hline
\textbf{Color}  & \textbf{Wavelength}         & \textbf{$V_F$}            \\ \hline
UV     & \textless{}400nm   & 3.1 - 4.4        \\ \hline
Violet & 400nm - 450nm      & 2.8 - 4.0        \\ \hline
Blue   & 450nm - 500nm      & 2.5 - 3.7        \\ \hline
Green  & 500nm - 570nm      & 1.9 - 4.0        \\ \hline
Yellow & 570nm - 590nm      & 2.1 - 2.2        \\ \hline
Orange & 590nm - 610nm      & 2.0 - 2.1        \\ \hline
Red    & 610nm - 760nm      & 1.6 - 2.0        \\ \hline
IR     & \textgreater 760nm & \textgreater 1.9 \\ \hline
\end{tabular} \\

	\item Low pass filter
	      \subitem A type of AC filter that eliminates high frequencies.\\
	\item Low side switch
	      \subitem A type of switch where the switching device is placed between the main circuit and the common path.\\
	\item Lumped Parameter
	      \subitem A simplification technique that lumps device properties into a point-like object. \\
	      \\


	      % ========== M ============
	      \IEEEPARstart{M}{ike}\\
	\item Mega-
	      \subitem The metric prefix meaning one million ($10^{6}$) times the base unit.\\
  \item Memcapacitor
    \subitem A passive circuit element whose capacitance is voltage and charge dependent. \\
  \item Meminductor
	  \subitem A passive circuit device whose inductance is dependent on current or flux. \\
  \item Memristor 
	      \subitem A charge dependent resistor with the behaviour $V(t) =\ M(q(t)) I(t)$.\\
	\item Metal Oxide Varistor (MOV)
	      \subitem A type of varistor made from sintered ceramic metal-oxide materials. \\
	\item Micro-
	      \subitem The metric prefix meaning one millionth ($10^{-6}$) of the base unit.\\
	\item Milli-
	      \subitem The metric prefix meaning one thousandth ($10^{-3}$) of the base unit.\\
	\item MOSFET
	      \subitem Metal Oxide Semiconducting Field Effect Transistor. Voltage ($V_{GS}$) controls the current ($I_D$). \\

	      % ========== N ============
	      \IEEEPARstart{N}{ovember}\\
	\item Nano-
	      \subitem The metric prefix meaning one billionth ($10^{-9}$) of the base unit.\\
	\item Negative Feedback
	      \subitem A way to control the output behaviour of an operational amplifier by feeding the output into the inverting terminal. Passive devices may optionally be present between the output and inverting terminal to change the output behaviour further.\\
  \item Noise
    \subitem Signal disturbances that are not part of an intentional signal. \\
  \item Noise Figure
    \subitem The noise difference between an actual device and an ideal device with the same gain and bandwidth; measured in decibels. \\
	\item Normalized response
	      \subitem \\

	      % ========== O ============
	      \IEEEPARstart{O}{scar}\\
	\item Ohm ($\Omega$)
	      \subitem The base SI unit of resistance. \\
	\item Omega ($\omega$)
	      \subitem Symbol indicating angular frequency\\
	\item Operational Amplifier (Op-Amp)
	      \subitem An active device that enables isolation, comparison, and amplification.\\
	\item Over Voltage ($V_O$)
	      \subitem When $V_{GS}-V_t > 0$. \\
	\item Oxide Capacitance ($C_{OX}$)
	      \subitem The capacitance of the oxide layer of a MOSFET. \\
	\item Oxide Thickness ($t_{OX}$)
	      \subitem The thickness of the oxide layer of a MOSFET. \\


	      % ========== P ============
	      \IEEEPARstart{P}{apa}\\
  \item Pentode
    \subitem A five-terminal power vacuum tube device with an anode/plate (P), cathode (K), control grid (G1), screen grid (G2), and suppressor (G3). \\
  \item Phase Splitter
    \subitem A device that splits an input signal into two output signals with a phase offset of $180^\circ$. \\
  \item Photoelectric Effect
    \subitem A material phenomenon in which a voltage is generated when exposed to light. \\
	\item Pico-
	      \subitem The metric prefix meaning one trillionth ($10^{-12}$) of the base unit.\\
	\item Positive Feedback
	      \subitem In the context of an operational amplifier, it implies some kind of connection from the output terminal to the non-inverting input. \\
	\item Power Supply
	      \subitem A nonlinear circuit that can reliably supply a specific voltage or specific current. \\
	\item Power Supply Distribution
	      \subitem \\
  \item Push-Pull Configuration
    \subitem A basic circuit shape that uses a pair of active devices to enhance load capacity and switching speed. \\

	      % ========== Q ============
	      \IEEEPARstart{Q}{uebec}\\\\
	\item Quiescent
	      \subitem When a device is dissapating power without a signal input.\\

	      % ========== R ============
	      \IEEEPARstart{R}{omeo}\\
	\item Rectification
	      \subitem Forcing polarity on a signal.\\
  \item Reactancea
    \subitem The complex part of an impedance; measured in ohms. \\
  \item Resistance
    \subitem The measure of how much voltage is required to drive an electric current through an object; measured in ohms; \\
  \item Resistor
	      \subitem A purely resistive linear device with no transient properties.\\
	\item Rheostat
	      \subitem A type of variable resistor used to control power. \\

	      % ========== S ============
	      \IEEEPARstart{S}{ierra}\\
	\item Sallen-Key LPF Circuit
	      \subitem A 2-pole circuit with a non-inverting amplifier. \\
	\item Saturation (for BJTs)
	      \subitem The regime of operation for BJTs where increasing $V_{BE}$ increases $I_C$. \\
	\item Saturation (for MOSFETs)
	      \subitem The regime of operation for MOSFETs where $V_{GS}$ is positive and increasing ${V_DS}$ does not affect $I_D$ \\
	\item Schottky Diode
	      \subitem A low forward voltage, high switching speed, high reverse leakage current diode. \\
  \item Screen Grid
    \subitem A terminal found on tetrode and pentode tubes used to decrease the effects of grid-to-plate capacitance. \\
  \item Shielding
	      \subitem A piece of metal, wrapped around a wire or electronic device used to minimize EMI noise and radiation. \\
  \item Silicon Diode
        \subitem A type of low-power diode made of silicon. Forward voltage ($V_F$) is 0.6 to 1.0 volts with 0.7 volts being quite common. The reverse breakdown voltage of a silicon diode is usually several tens of volts (70v to 100v is common), \\
  \item Summing Amplifier
	      \subitem A type of amplifier that adds voltages: can be inverting or non-inverting \\
  \item Suppressor Grid
    \subitem A terminal added to a tetrode to create a pentode and eliminate the dynatron (negative resistance) regime of operation. \\
  \item Susceptance
    \subitem The reciprocal of reactance; measured in siemens. \\
	      % ========== T ============
	      \IEEEPARstart{T}{ango}\\
	\item Temperature (T)
	      \subitem The total kinetic energy of a system. It often affects the behaviour of devices, notably resistors, diodes, and transistors. \\
  \item Tetrode ("Space Charge" Tube)
        \subitem A four-terminal power tube device with a negative resistance regime. Its four terminals are the anode/plate (P), the cathode (K), the control grid (G1), and the screen grid (G2). \\
	\item Thermal Model Electronics
	      \subitem A way to model the thermal behavior of electronic devices using circuit schematic symbols.\\
	\item Threshold Voltage ($V_t$)
	      \subitem The minimum $V_{GS}$ required to turn a MOSFET on. \\
	\item Transformer
	      \subitem An inducting device that can step up or step down AC voltage while having little power loss. \\
	\item Transistor
	      \subitem A three terminal, active, semiconducing device that acts as an electronic switch.\\
	\item Triaxial Cable
	      \subitem A cable with three concentric conductors used to minimize EMI. \\
	\item Triode (Audion Tube)
	      \subitem A voltage controlled current source tube device with three terminals: the cathode, the anode, and the gate. \\
	\item Triode Region
	      \subitem The operating regime of a MOSFET where increasing $V_{DS}$ increases $I_D$. It is also the name of a power-hungry tube device with amplifying properties. \\
  \item Tube (Vacuum Tube)
    \subitem A power electronics device that operates within a glass enclosure with all air evacuated. The device uses the heat generated to eable its behavior. These devices are often characterized by their distinct orange glow. \\
	\item Twisted pair
	      \subitem Two wires wrapped around one another to minimize loop area, thereby decreasing EMI. \\

	      % ========== U ============
	      \IEEEPARstart{U}{niform}\\
	\item Unipolar
	      \subitem Simply a single supply voltage and ground reference. As opposed to Bipolar with + and - supply voltages. \\

       % ========== V ============
	      \IEEEPARstart{V}{ictor}\\
	\item V-I Response
	      \subitem A visual comparison of the voltage and current response of an electronic device.\\
  \item Varistor (Voltage Dependent Resistor (VDR))
    \subitem A non-ohmic, nonlinear resistive device that exhibits high resistance at lower voltages and low resistance at higher voltages. \\
  \item Very Large-Scale Integration (VLSI)
    \subitem The process by which millions or billions of CMOS devices are combined into a single IC. \\
	\item Virtual Ground
    \subitem A voltage that is very close to ground caused by amplifier feedback. \\
  \item Voltage Swing
    \subitem The difference between maximum output voltage and minimum output voltage. It acts as a way of measuring how close to a rail output voltage can be driven. \\
	      % ========== W ============
	      \IEEEPARstart{W}{hiskey}\\
	\item Width of Channel (W)
	      \subitem The width of a MOSFET channel. \\
  \item Williamson Amplifier
    \subitem A famous high-fidelity tube-based audio amplifier. \\

	      % ========== X ============
	      \IEEEPARstart{X}{-ray}\\
	      \\

	      % ========== Y ============
	      \IEEEPARstart{Y}{ankee}\\
      \item Y-Configuration (Wye Configuration)
        \subitem Three resistors meeting at a junction. It can be transformed into a delta configuration using the following method: \\ \\
        $R_{AB} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_C}$ \\ \\
        $R_{AC} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_B}$ \\ \\
        $R_{BC} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_A}$ \\

	      % ========== Z ============
	      \IEEEPARstart{Z}{ulu}\\
	\item Zener Diode
	      \subitem A special type of diode with a set reverse breakdown voltage.\\
	\item Zener Shunt Regulator
	      \subitem A type of power regulator that clamps voltage using a Zener Diode.\\
\end{enumerate}
\end{document}





