Pretty much all of Fall 2024

7th-Semester-Fall-2024/VLSI/homework/homework-5/homework-5.md

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+# Homework 5 - Aidan Sharpe
+
+## Problem 1
+If the gate oxide thickness in a SiO$_2$-based structure is 2[nm], what would be the thickness of an HfO$_2$-based dielectric providing the same capacitance?
+
+$k_\text{SiO2} = 3.9$
+
+$k_\text{HfO2} = 20$
+$$2\text{[nm]} \frac{2.0}{3.9} = \boxed{10.26\text{[nm]}}$$
+
+## Problem 2
+Using the SUBM rules, clculate the minimum uncontacted and contacted transistor pitch.
+
+### Uncontacted
+
+$\lambda + 3\lambda + \lambda = \boxed{5\lambda}$
+
+### Contacted
+$\lambda + 2\lambda + 2\lambda + 2\lambda + \lambda = \boxed{5\lambda}$