4th Semseter files
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4th-Semester-Spring-2023/CompNetworks/Assignment one.docx
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4th-Semester-Spring-2023/CompNetworks/Assignment two.docx
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4th-Semester-Spring-2023/CompNetworks/Assignment1-6d.jpg
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4th-Semester-Spring-2023/CompNetworks/Lab 1.docx
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4th-Semester-Spring-2023/CompNetworks/Lab 2.doc
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4th-Semester-Spring-2023/CompNetworks/Lab 3.docx
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4th-Semester-Spring-2023/CompNetworks/Lab 4.docx
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4th-Semester-Spring-2023/CompNetworks/Lab 5.docx
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4th-Semester-Spring-2023/CompNetworks/Sharpe_Assignment3.docx
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4th-Semester-Spring-2023/CompNetworks/~$Lab 2.doc
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||||
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||||
\@writefile{toc}{\contentsline {section}{\numberline {3}Conclusions}{2}{}\protected@file@percent }
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"appnote.log"
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"appnote.pdf"
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4th-Semester-Spring-2023/Electronics/ApplicationNote/appnote.pdf
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\documentclass{article}
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||||
\title{Making A Synthesizer: An Application Note}
|
||||
\author{Aidan Sharpe}
|
||||
|
||||
\begin{document}
|
||||
Building a synthesizer for this semester's Electronics I final project was no simple task. However, the principles involved in its construction are. In this application note, I will discuss the planning stages and how the synthesizer works at a granular scale.
|
||||
|
||||
\section{Planning the Synth}
|
||||
During our first lab of the semester, one of the tasks was to construct an astable multivibrator with an oscillation frequency of 500Hz. Before building it, I did not have a great understanding of how they worked, but once I worked through the math, I was amazed. Using fairly imprecise components, we were able to achieve an oscillation frequency of 507Hz, not too bad.
|
||||
|
||||
I grew up watching videos about old school computers and synthesizers, specifically, the Commodore 64's SID chip. I became familiar with simple waveforms, and high school I played around with Fourier series on my graphing calculator to construct these waveforms. So when I was able to quickly create a square wave with only a handful of readily available parts, my imagination went straight to synthesizers.
|
||||
|
||||
In February, Elise and I started making schematics to create more waveforms from the astable multivibrator. I used an integrator to turn the square wave into a triangle wave, and I was able to use a two stage diode shaper to approximate a sine wave. Unfortunately, here we ran into trouble. Since we were integrating a square wave, the amplitude of the created triangle wave would shrink as frequencies got higher. We should have anticipated this since our integrator was a low pass filter. At this point the project took a turn into the world of embedded systems.
|
||||
|
||||
\section{How the Synth Works}
|
||||
By employing a microcontroller, the higher frequency attenuation was no longer an issue. Instead, timers were chosen to select an output value for each waveform at each point in time. Elise was able to put together the code that would allow the microcontroller to select the frequency based on a button press, while I focused on generating the signals. Since the GPIO pins are strictly digital, I opted to convert the values from the timers to pulse width modulation (PWM). My strategy for doing this was too computationally intense, and I was not able to create PWM signals any faster than 1KHz, which would not cut it for the frequencies we wanted to generate.
|
||||
|
||||
Simulating the electronics portion went very smoothly. I was able to put together a python script that made preset PWM signals in the form of a PWL file that would control a voltage source in LTspice. Using a low pass filter, some voltage followers, and a summing amplifier to act as a mixer, we were able to simulate triangle and sawtooth waves that looked quite good. In addition, we were able to combine the two waveforms together with the summing amplifier to create a sort of bent sawtooth wave.
|
||||
|
||||
\section{Conclusions}
|
||||
Overall, the project served as a learning experience more than anything. If we had another week or so, I think we could have used a system similar to the python script I made to generate some preset PWM values for the microcontroller to use. We also found some wiring errors on our printed circuit board that would have caused problems once we got the microcontroller to generate the desired output signals. We were fairly close to a working product, and I am happy that I got to work on such a fun and rewarding project.
|
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\end{document}
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65
4th-Semester-Spring-2023/Electronics/DiodesNotes.md
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# Diodes
|
||||
|
||||
Anode Cathode
|
||||
|
||||
$I_D = I_{DSS}(e^{V_D/V_t} - 1)$
|
||||
|
||||
$V_t = \frac{kT}{q}$
|
||||
where:
|
||||
k is Boltzman's constant
|
||||
T is absolute temperature
|
||||
q is electron charge
|
||||
|
||||
|
||||
## Lab Equipment
|
||||
|
||||
### Low pass filter
|
||||
$f_0=\frac{1}{2 \pi RC}$
|
||||
|
||||
<br>
|
||||
<br>
|
||||
|
||||
## Diodes
|
||||
Diode equation: $I_d = I_{DSS}(e^{\frac{V_d}{V_t}} - 1)$
|
||||
|
||||
$V_t = \frac{kT}{q}$
|
||||
|
||||
<img src="https://imgs.search.brave.com/RrHexApc_mfmet-VCGyYf503Jf69656IXetYXS38tns/rs:fit:858:523:1/g:ce/aHR0cHM6Ly9pMC53/cC5jb20vd3d3LmVs/ZWN0cm9uaWNsaW5p/Yy5jb20vd3AtY29u/dGVudC91cGxvYWRz/LzIwMjAvMDcvdHlw/ZXMtb2YtZGlvZGVz/LUYxLmpwZz9zc2w9/MQ" width=500/>
|
||||
|
||||
### Forward voltages
|
||||
|V<sub>f</sub>| Diode type|
|
||||
|--|--|
|
||||
0.7| Si Diode
|
||||
0.2 | Ge Diode
|
||||
0.2 | Schottky
|
||||
||GaN
|
||||
||SiC
|
||||
1.8 to 2.2 | LED
|
||||
|
||||
<br/>
|
||||
<br/>
|
||||
<br/>
|
||||
|
||||
### VI Response
|
||||
<img src="https://imgs.search.brave.com/R9Y1RO7jyfaxB6che9b1WqCfRI5IEb9yeUPYZzak6QA/rs:fit:1000:1000:1/g:ce/aHR0cHM6Ly9jZG4u/c3BhcmtmdW4uY29t/L2Fzc2V0cy80LzQv/YS81L2IvNTE3NWI1/MThjZTM5NWYyZDQ5/MDAwMDAwLnBuZw" width=500/>
|
||||
|
||||
<br/>
|
||||
<br/>
|
||||
<br/>
|
||||
|
||||
### Rectification
|
||||
<img src="https://imgs.search.brave.com/ZXTWN4M8NO75Ygnizk3VEkitLUswQXP9tPCSjild0sw/rs:fit:871:277:1/g:ce/aHR0cHM6Ly9lbmdp/bmVlcmluZ3R1dG9y/aWFsLmNvbS93cC1j/b250ZW50L3VwbG9h/ZHMvMjAxNi8wNy9l/bmdpbmVlcmluZ3R1/dG9yaWFsLmNvbV9o/YWxmLXdhdmUtcmVj/dGlmaWVyLW9wZXJh/dGlvbi5wbmc" width=500/>
|
||||
|
||||
<br>
|
||||
<br>
|
||||
<br>
|
||||
|
||||
### Zener Regulation
|
||||
<img src="https://imgs.search.brave.com/-akFqUvpLhkHKhtMa5P-gAcfe0B3ntZ0IDdYsJaMZ6o/rs:fit:1200:1200:1/g:ce/aHR0cHM6Ly9jZG4x/LmJ5anVzLmNvbS93/cC1jb250ZW50L3Vw/bG9hZHMvMjAxOC8x/MS9waHlzaWNzL3dw/LWNvbnRlbnQvdXBs/b2Fkcy8yMDE2LzAy/L1plbmVyLWRpb2Rl/LWFzLWEtVm9sdGFn/ZS1SZWd1bGF0b3It/MDIuanBn" width=500/>
|
||||
|
||||
|
||||
## Clamp Diodes
|
||||
<div style="background-color:white;width:500px;">
|
||||
<img src=https://i0.wp.com/enacademic.com/pictures/enwiki/55/737px-Zener_Diode.svg.png>
|
||||
</div>
|
||||
|
40
4th-Semester-Spring-2023/Electronics/Draft5.asc
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|
||||
Version 4
|
||||
SHEET 1 880 680
|
||||
WIRE 256 96 256 16
|
||||
WIRE 192 144 96 144
|
||||
WIRE 256 240 256 192
|
||||
FLAG 256 240 0
|
||||
FLAG 256 -64 Vcc
|
||||
IOPIN 256 -64 In
|
||||
FLAG 16 144 Vb
|
||||
IOPIN 16 144 In
|
||||
FLAG -576 208 0
|
||||
FLAG -400 208 0
|
||||
FLAG -576 128 Vcc
|
||||
IOPIN -576 128 Out
|
||||
FLAG -400 128 Vb
|
||||
IOPIN -400 128 Out
|
||||
SYMBOL npn 192 96 R0
|
||||
SYMATTR InstName Q1
|
||||
SYMBOL res 112 128 R90
|
||||
WINDOW 0 0 56 VBottom 2
|
||||
WINDOW 3 32 56 VTop 2
|
||||
SYMATTR InstName R1
|
||||
SYMATTR Value 100k
|
||||
SYMBOL res 272 32 R180
|
||||
WINDOW 0 36 76 Left 2
|
||||
WINDOW 3 36 40 Left 2
|
||||
SYMATTR InstName R2
|
||||
SYMATTR Value 1k
|
||||
SYMBOL voltage -576 112 R0
|
||||
WINDOW 123 0 0 Left 0
|
||||
WINDOW 39 0 0 Left 0
|
||||
SYMATTR InstName V1
|
||||
SYMATTR Value DC2
|
||||
SYMBOL voltage -400 112 R0
|
||||
WINDOW 123 0 0 Left 0
|
||||
WINDOW 39 0 0 Left 0
|
||||
SYMATTR InstName V2
|
||||
SYMATTR Value DC1
|
||||
TEXT -408 272 Left 2 !.dc V2 0 1 0.01
|
||||
TEXT -616 288 Left 2 !.param
|
13
4th-Semester-Spring-2023/Electronics/Draft5.log
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|
||||
Circuit: * C:\users\sharpe\Documents\Templates\Rowan\2023-Spring\Electronics\Draft5.asc
|
||||
|
||||
Warning: Multiple definitions of model "2scr375p" Type: BJT
|
||||
Warning: Multiple definitions of model "bc857b" Type: BJT
|
||||
Warning: Multiple definitions of model "bc847c" Type: BJT
|
||||
Warning: Multiple definitions of model "bc847b" Type: BJT
|
||||
Error on line 5 : v1 vcc 0 dc2
|
||||
Unknown parameter "dc2"
|
||||
Error on line 6 : v2 vb 0 dc1
|
||||
Unknown parameter "dc1"
|
||||
v1: Missing value, assumed 0V @ DC
|
||||
v2: Missing value, assumed 0V @ DC
|
||||
Fatal Error: DC sweep: Source "dc1" not found
|
BIN
4th-Semester-Spring-2023/Electronics/ElectronicsIFinalExam.pdf
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4th-Semester-Spring-2023/Electronics/Glossary/glossary.aux
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||||
\relax
|
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4th-Semester-Spring-2023/Electronics/Glossary/glossary.dvi
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4th-Semester-Spring-2023/Electronics/Glossary/glossary.fdb_latexmk
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# Fdb version 3
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|
31
4th-Semester-Spring-2023/Electronics/Glossary/glossary.ist
Executable file
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|
||||
% makeindex style file created by the glossaries package
|
||||
% for document 'glossary' on 2023-2-21
|
||||
actual '?'
|
||||
encap '|'
|
||||
level '!'
|
||||
quote '"'
|
||||
keyword "\\glossaryentry"
|
||||
preamble "\\glossarysection[\\glossarytoctitle]{\\glossarytitle}\\glossarypreamble\n\\begin{theglossary}\\glossaryheader\n"
|
||||
postamble "\%\n\\end{theglossary}\\glossarypostamble\n"
|
||||
group_skip "\\glsgroupskip\n"
|
||||
item_0 "\%\n"
|
||||
item_1 "\%\n"
|
||||
item_2 "\%\n"
|
||||
item_01 "\%\n"
|
||||
item_x1 "\\relax \\glsresetentrylist\n"
|
||||
item_12 "\%\n"
|
||||
item_x2 "\\relax \\glsresetentrylist\n"
|
||||
delim_0 "\{\\glossaryentrynumbers\{\\relax "
|
||||
delim_1 "\{\\glossaryentrynumbers\{\\relax "
|
||||
delim_2 "\{\\glossaryentrynumbers\{\\relax "
|
||||
delim_t "\}\}"
|
||||
delim_n "\\delimN "
|
||||
delim_r "\\delimR "
|
||||
headings_flag 1
|
||||
heading_prefix "\\glsgroupheading\{"
|
||||
heading_suffix "\}\\relax \\glsresetentrylist "
|
||||
symhead_positive "glssymbols"
|
||||
numhead_positive "glsnumbers"
|
||||
page_compositor "."
|
||||
suffix_2p ""
|
||||
suffix_3p ""
|
1266
4th-Semester-Spring-2023/Electronics/Glossary/glossary.log
Executable file
131
4th-Semester-Spring-2023/Electronics/Glossary/glossary.md
Executable file
@ -0,0 +1,131 @@
|
||||
# Electronics I Glossary
|
||||
|
||||
## A
|
||||
* [Alpha](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Anode](https://en.wikipedia.org/wiki/Anode)
|
||||
|
||||
## B
|
||||
* Bandwidth
|
||||
* Base
|
||||
* [Biasing](https://en.wikipedia.org/wiki/Biasing)
|
||||
* Bipolar
|
||||
* [Bipolar Junction Transistor (BJT)](https://en.wikipedia.org/wiki/Bipolar_junction_transistor)
|
||||
* [Brain Box (ECM)]
|
||||
* [Bravo](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## C
|
||||
* [Capacitor](https://en.wikipedia.org/wiki/Capacitor)
|
||||
* [Cathode](https://en.wikipedia.org/wiki/Cathode)
|
||||
* [Center tap transformer](https://en.wikipedia.org/wiki/Center_tap)
|
||||
* [Charlie](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Clamp Diodes](https://en.wikipedia.org/wiki/Clamper_(electronics))
|
||||
* Collector
|
||||
* Cut-off
|
||||
|
||||
## D
|
||||
* [Delta](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Dielectric](https://en.wikipedia.org/wiki/Dielectric)
|
||||
* [Diode](https://en.wikipedia.org/wiki/Diode)
|
||||
|
||||
## E
|
||||
* [Echo](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Electrolytic Capacitor](https://en.wikipedia.org/wiki/Electrolytic_capacitor)
|
||||
* Electronic Design Automation (EDA)
|
||||
* Emitter
|
||||
* Energy Assurance Plan (EAP)
|
||||
|
||||
## F
|
||||
* [Forward voltage](https://en.wikipedia.org/wiki/P%E2%80%93n_diode#Forward_bias)
|
||||
* [Foxtrot](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Full Wave Rectifier
|
||||
|
||||
## G
|
||||
* Gain
|
||||
* [Giga](https://en.wikipedia.org/wiki/Giga-)
|
||||
* Unit scale $\times10^9$
|
||||
* [Golf](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
## H
|
||||
* Half Wave Rectifier
|
||||
* [Hotel](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Hysteresis
|
||||
|
||||
## I
|
||||
* [India](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## J
|
||||
* [Juliet](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## K
|
||||
* [Kilo](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Kilo](https://en.wikipedia.org/wiki/Kilo-)
|
||||
* Unit scale $\times10^3$
|
||||
|
||||
## L
|
||||
* [Lima](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Low-pass filter
|
||||
|
||||
## M
|
||||
* [Mega](https://en.wikipedia.org/wiki/Mega-)
|
||||
* Unit scale $\times10^6$
|
||||
* Memristor
|
||||
* Metal Oxide Veristor (MOV)
|
||||
* Micro
|
||||
* Unit scale $\times10^{-6}$
|
||||
* [Mike](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Milli
|
||||
* Unit scale $\times10^{-3}$
|
||||
|
||||
## N
|
||||
* Nano
|
||||
* Unit scale $\times10^{-9}$
|
||||
* Negative feedback
|
||||
* [November](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## O
|
||||
* Operational Amplifier (Op Amp)
|
||||
* [Oscar](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## P
|
||||
* [Papa](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Positive feedback
|
||||
|
||||
## Q
|
||||
* [Quebec](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* Quiescent
|
||||
* No signal input, but dissipating power
|
||||
|
||||
## R
|
||||
* Rectification
|
||||
* Resistor
|
||||
* [Romeo](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
## S
|
||||
* Saturation
|
||||
* Schottky Diode
|
||||
* [Sierra](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## T
|
||||
* [Tango](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* [Transistor](https://en.wikipedia.org/wiki/Transistor)
|
||||
* Transformer
|
||||
|
||||
## U
|
||||
* [Uniform](https://en.wiki3pedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## V
|
||||
* [Victor](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
* V-I Response
|
||||
* A visual comparison of the voltage and current response of an electronic device
|
||||
|
||||
## W
|
||||
* [Whiskey](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## X
|
||||
* [X-ray](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## Y
|
||||
* [Yankee](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
||||
|
||||
## Z
|
||||
* [Zener Diode](https://en.wikipedia.org/wiki/Zener_diode)
|
||||
* [Zener Regulation](https://en.wikipedia.org/wiki/Voltage_regulator#DC_voltage_stabilizers)
|
||||
* [Zulu](https://en.wikipedia.org/wiki/NATO_phonetic_alphabet)
|
BIN
4th-Semester-Spring-2023/Electronics/Glossary/glossary.pdf
Executable file
BIN
4th-Semester-Spring-2023/Electronics/Glossary/glossary.synctex.gz
Executable file
433
4th-Semester-Spring-2023/Electronics/Glossary/glossary.tex
Executable file
@ -0,0 +1,433 @@
|
||||
\documentclass{IEEEtran}
|
||||
|
||||
\usepackage{enumerate}
|
||||
|
||||
\title{Electronics I Glossary}
|
||||
\author{Aidan Sharpe}
|
||||
|
||||
\begin{document}
|
||||
\maketitle
|
||||
|
||||
\begin{abstract}
|
||||
This glossary contains definitions of useful terms in electronics. Please note that all terms are numbered except for the 26 NATO phonetic alphabet terms, which should be included in the total number of words.
|
||||
\end{abstract}
|
||||
|
||||
% ========== A ============
|
||||
\IEEEPARstart{A}{lfa}\\
|
||||
\begin{enumerate}
|
||||
\item Active Region
|
||||
\subitem The area of a transistor I-V curve where current no longer increases with an increased voltage. Power is dissipating, quiescence achieved \\
|
||||
\item Admittance
|
||||
\subitem The reciprocal of impedance denoted by $Y$; measured in siemens. \\
|
||||
\item Anode
|
||||
\subitem A negatively polarized electrode, pin, or terminal.\\
|
||||
\item Astable Multivibrator
|
||||
\subitem A positive feedback device that utilizes hysteresis and transient response to generate a tuneable square wave from a DC input. \\
|
||||
|
||||
% ========== B ============
|
||||
\IEEEPARstart{B}{ravo}\\
|
||||
\item Bandpass Filter
|
||||
\subitem A type of electronic filter that allows a selected range of frequencies to pass through. \\
|
||||
\item Bandreject Filter
|
||||
\subitem A type of electronic filter that only blocks a selected range of frequencies from passing through. \\
|
||||
\item Bandwidth
|
||||
\subitem The size of a defined range of frequencies. \\
|
||||
\item Base
|
||||
\subitem The terminal of a bipolar junction transistor that controls the open and closed switch behavior.\\
|
||||
\item Biasing
|
||||
\subitem A method to set voltages or currents in certain areas of a circuit to predetermined values. \\
|
||||
\item Bipolar
|
||||
\subitem When + and - references are used at the rails. There is a common ground. \\
|
||||
\item Bipolar Junction Transistor
|
||||
\subitem A type of semiconducing transistor.\\
|
||||
\item Biquadratic (Biquad)
|
||||
\subitem $H(z)={\frac {b_{0}+b_{1}z^{{-1}}+b_{2}z^{{-2}}}{a_{0}+a_{1}z^{{-1}}+a_{2}z^{{-2}}}}$\\
|
||||
\item Bode Plot
|
||||
\subitem A logarithmic scale graph showing gain vs. frequency. \\
|
||||
\item Boltzmann's Constant ($k$ or $k_B$)
|
||||
\subitem A constant ($1.380649 \times 10^{-23} J \cdotp K^{-1}$) that relates thermal energy to temperature. \\
|
||||
\item Brain Box
|
||||
\subitem A colloquial term for an Engine Control Module (ECM).\\
|
||||
\item Buffer
|
||||
\subitem A type of circuit isolator, i.e unity gain follower\\
|
||||
\item Bulk Capacitor
|
||||
\subitem A capacitor used to prevent the output of a power supply from dropping too low. \\
|
||||
\item Bypass Capacitor
|
||||
\subitem A Bypass Capacitor is a capacitance that shorts AC signals to ground, so that any AC noise that may be present on a DC signal is removed, producing a much cleaner and pure DC signal. Usually about $0.1 \mu F$ \\
|
||||
\
|
||||
|
||||
% ========== C ============
|
||||
\IEEEPARstart{C}{harlie}\\
|
||||
\item C
|
||||
\subitem The speed of ligaht $3\times10^8 m/s$ \\
|
||||
\item Capacitor
|
||||
\subitem A passive transient linear device that stores energy in an electric field.\\
|
||||
\item Cathode
|
||||
\subitem A positively polarize electrode, pin, or terminal\\
|
||||
\item Center Tap Transformer
|
||||
\subitem A tranformer that with a central comamon terminal: offering a positive and negative voltage on either side with equal magnitude.\\
|
||||
\item Clamp Diodes
|
||||
\subitem A diode that is used to force a voltage on the anode.\\
|
||||
\item Charge of an Electron (q)
|
||||
\subitem $1.602 \times 10^{-19} C$ \\
|
||||
\item Collector
|
||||
\subitem The positive terminal of a BJT.\\
|
||||
\item Common Base Amplifier (Grounded Base)
|
||||
\subitem A basic BJT amplifier topology in which the base terminal is grounded. Current gain is unity and voltage gain is proportional to the value of the resistor between the rail and the output. \\
|
||||
\item Common Cathode Amplifier
|
||||
\subitem The tube equivelant of a common emitter amplifier. \\
|
||||
\item Common Collector Amplifier
|
||||
\subitem A basic single-stage BJT amplifier where the collector terminal is directly connected to a power rail or ground. On common collector amplifiers, voltage gain is very low (around unity) while current gain remains high around $h_{FE}$. \\
|
||||
\item Common Emitter Amplifier
|
||||
\subitem A simple single-stage BJT amplifier where the emmiter terminal is directly connected to a power rail or ground. They have high current gain and are usually used to amplify voltage. The output is typically phase-shifted by $180^\circ$. \\
|
||||
\item Common Grid
|
||||
\subitem The tube equivelant of a common base amplifier. \\
|
||||
\item Common Mode Rejection Ratio (CMRR)
|
||||
\subitem $CMRR = 20\log_{10} \left(\frac{A_d}{A_{cm}}\right)$ \\
|
||||
\item Common Path
|
||||
\subitem A shared (common) ground reference. \\
|
||||
\item Common Plate (Common Anode)
|
||||
\subitem The tube equivelant circuit of a common collector amplifier. \\
|
||||
\item Complementary Metal-Oxide-Semiconductor (CMOS)
|
||||
\subitem A type of MOSFET fabrication process that consists of N-type and P-type MOSFETs working together to create digital logic functions. It is the most VLSI technique. \\
|
||||
\item Controller Area Network (CAN Bus)
|
||||
\subitem A standard device interconnect for multiplexed wiring. It is primarily used for wiring devices in vehicles. \\
|
||||
\item Conductance
|
||||
\subitem The reciprocal of resistance, denoted by $G$; measured in siemens. \\
|
||||
\item Control Grid
|
||||
\subitem The terminal of a tube device that controls the flow of electrons between the cathode and anode via an applied voltage. \\
|
||||
\item Coulomb (C)
|
||||
\subitem The base SI unit of charge. \\
|
||||
\item Cut-off
|
||||
\subitem The area of a transistor I-V curve where there is no current \\
|
||||
|
||||
% ========== D ============
|
||||
\IEEEPARstart{D}{elta}\\
|
||||
\item Darlington pair
|
||||
\subitem A pair of BJTs arranged in such a way that the total current gain is $\beta_{pair} = \beta_1 \cdotp \beta_2$. \\
|
||||
\item DC Restorer
|
||||
\subitem Also known as a clamper, not to be confused with a voltage clamp, a DC restorer is a type of electronic circuit that shifts an AC signal to be completely positive or negative and maintains that $V_{max}$ or $V_{min}$ is 0.\\
|
||||
\item Delta Configuration ($\Delta$ Configuration)
|
||||
\subitem Three resistors arranged along the edges of a triangle. It can be transformed into a y-configuration using the following method: \\ \\
|
||||
$R_A = \frac{R_{AB}R_{AC}}{R_{AB}+R_{AC}+R_{BC}}$ \\ \\
|
||||
$R_B = \frac{R_{AB}R_{BC}}{R_{AB}+R_{AC}+R_{BC}}$ \\ \\
|
||||
$R_C = \frac{R_{AC}R_{BC}}{R_{AB}+R_{AC}+R_{BC}}$ \\
|
||||
\item Dielectric
|
||||
\subitem A material that increases the affect of an electric field: often used to increase capacitance. Typically denoted by a $\kappa$ \\
|
||||
\item Differential Amplifier
|
||||
\subitem A two-input amplifying device with the transfer function: $V_o = A_d (V_+ - V_-) + A_c \frac{V_+ - V_-}{2}$, where $A_d$ is the differential gain, and $A_c$ is the common mode gain, \\
|
||||
\item Differential Pair
|
||||
\subitem A signal that is sent over two wires simultaneously as an inverted and non-inverted signal. It is used to increase signal voltage and reject common-mode noise. \\
|
||||
\State
|
||||
\EndWhile
|
||||
\item Diode
|
||||
\subitem A two terminal device that allows current to travel in only one direction.\\
|
||||
\item Diode Thermal Voltage
|
||||
\subitem The voltage across a diode's PN junction caused by thermal motion of electrons. The thermal voltage is defined as $V_{T} = \frac{kT}{q}$; where $k$ is Boltzmann's constant, T is the temperature in Kelvin, and q is the absolute value of the charge of an electron. \\
|
||||
\item Distributed Parameter
|
||||
\subitem A component with properties along a length or area rather than localized at a point. Must be used to model a component when the component is not much smaller than one wavelength. \\
|
||||
\item Drain
|
||||
\subitem The terminal of a MOSFET where current flows out towards the common path. \\
|
||||
\item Dynatron Region (Tetrode Kink)
|
||||
\subitem The operating regime of a tetrode where the device exhibits negative resistance behavior. \\
|
||||
\\
|
||||
|
||||
% ========== E ============
|
||||
\IEEEPARstart{E}{cho}\\
|
||||
\item Early Voltage ($V_A$)
|
||||
\subitem A characteristic property of a MOSFET device determined by the drain current and small signal output conductance. \\
|
||||
\item Edison Effect
|
||||
\subitem The thermionic effect by which electrons are transmitted from a hot cathode into a vacuum. \\
|
||||
\item Electromagnetic Interference {EMI}
|
||||
\subitem Also called radio-frequency interference (RFI) when in the radio frequency spectrum, is a disturbance generated by an external source that affects an electrical circuit by electromagnetic induction, electrostatic coupling, conduction, or radiation.\\
|
||||
\item Electrolytic Capacitor
|
||||
\subitem A type of polarized capacitor that uses an electrolyte and oxide layer to increase the dielectric constant.\\
|
||||
\item Electronic Design Automation (EDA)
|
||||
\subitem Specialized software used to design and simulate electronic devices\\
|
||||
\item Emitter
|
||||
\subitem The common path terminal of a BJT.\\
|
||||
\item Energy Assurance Plan (EAP)
|
||||
\subitem A plan to make energy infrastructure more reliable and secure. \\
|
||||
|
||||
% ========== F ============
|
||||
\IEEEPARstart{F}{oxtrot}\\
|
||||
\item Semiconductor Fabrication Plant (Fab)
|
||||
\subitem A high-tech factory where semiconductor devices are manufactured. \\
|
||||
\item Farad
|
||||
\subitem The base SI unit for capacitance. \\
|
||||
\item Filter
|
||||
\subitem A circuit that only allows certain frequencies through.\\
|
||||
\item Flyback Diode
|
||||
\subitem Also known as a clamp diode, a flyback diode is a use case for the clamping property of diodes, where the flyback voltage from an inductor is supressed. \\
|
||||
\item Forward Voltage
|
||||
\subitem The voltage at which a semiconducing device begins to conduct.\\
|
||||
\item Fudge Factor
|
||||
\subitem An extra term added to an equation to correct a result. \\
|
||||
\item Full Wave Rectifier
|
||||
\subitem A device that restricts the output voltage to one pole and inverts the sign of the opposite pole.\\
|
||||
|
||||
% ========== G ============
|
||||
\IEEEPARstart{G}{olf}\\
|
||||
\item Gain
|
||||
\subitem A logarithmic measure of amplification.\\
|
||||
\item Gate-to-source Voltage ($V_{GS}$)
|
||||
\subitem The voltage between the gate and the source of a MOSFET, responsible for controlling the switch state. \\
|
||||
\item General Interconnect
|
||||
\subitem A two-way electrical connection between two circuit components. \\
|
||||
\item Giga-
|
||||
\subitem The metric prefix meaning one billion ($10^{9}$) times the base unit.\\
|
||||
|
||||
% ========== H ============
|
||||
\IEEEPARstart{H}{otel}\\
|
||||
\item Harmonic Distortion
|
||||
\subitem A type of distortion that creates large spikes in gain at the harmonics (natural number multiples) of a frequency. \\
|
||||
\item Half Wave Rectifier
|
||||
\subitem A device that restricts the output voltage to one pole.\\
|
||||
\item High side switch
|
||||
\subitem A type of switch where the switching device is between the supply and the rest of the circuit.\\
|
||||
\item High Pass Filter
|
||||
\subitem A filtering device that attenuates frequencies below a cut-off value ($\omega_0$) and does not affect signals above the cut off point. \\
|
||||
\item Hysteresis
|
||||
\subitem Non-symmetric switching behavior of a circuit; the point of switching on is different from the point of switching off. \\
|
||||
\\
|
||||
% ========== I ============
|
||||
\IEEEPARstart{I}{ndia}\\
|
||||
\item Impedance
|
||||
\subitem The complex measure of resistance. Impedance is denoted by $Z$, in ohms, and is defined by the complex relationship $Z = R + jX$. \\
|
||||
\item Insulated Gate Bipolar Transistor (IGBT)
|
||||
\subitem A type of transistor designed for high current applications. \\
|
||||
\item Integrated Circuit (IC)
|
||||
\subitem A self-contained pre-manufactured circuit on a chip. They usually come in some kind of enclosure with an array of pins to interface with. \\
|
||||
\item Integrator
|
||||
\subitem An amplifier topology where the output voltage is the integral of the input signal with respect to time. \\
|
||||
\item Interconnect
|
||||
\subitem A circuit component responsible for electrical connections between components. \\
|
||||
\item Interconnect Shielding
|
||||
\subitem A component of an interconnect used to minimize EMI noise in the signal. \\
|
||||
\item Intermodulation Distortion
|
||||
\subitem A type of distortion caused by nonlinear signal processing behavior. It notably causes amplitude spikes at the harmonic frequencies as well as sum and difference frequencies of an input signal with multiple frequencies. \\
|
||||
\\
|
||||
|
||||
% ========== J ============
|
||||
\IEEEPARstart{J}{uliett}\\
|
||||
\item Junction Field Effect Transistor (JFET)
|
||||
\subitem A simple type of FET device that can be used as a switch or combined with resistors to build an amplifier. \\
|
||||
\\
|
||||
|
||||
% ========== K ============
|
||||
\IEEEPARstart{K}{ilo}\\
|
||||
\item Kelvin Leads
|
||||
\subitem A clip, often a crocodile clip, that connects a force-and-sense pair to measure very low resistances using four-terminal sensing.\\
|
||||
\item Kilo-
|
||||
\subitem The metric prefix meaning one thousand ($10^{3}$) times the base unit.\\
|
||||
|
||||
% ========== L ============
|
||||
\IEEEPARstart{L}{ima}\\
|
||||
\item Length of Channel (L)
|
||||
\subitem The lenth of a MOSFET channel; the dimension spanning the source and drain. \\
|
||||
\item Light Emitting Diode (LED)
|
||||
\subitem A type of diode that emits light when the forward voltage is reached. The forward voltage, $V_F$ is depentdent on the color of the LED; specific values can be seen in the table below: \\
|
||||
|
||||
\begin{tabular}{|l|l|l|}
|
||||
\hline
|
||||
\textbf{Color} & \textbf{Wavelength} & \textbf{$V_F$} \\ \hline
|
||||
UV & \textless{}400nm & 3.1 - 4.4 \\ \hline
|
||||
Violet & 400nm - 450nm & 2.8 - 4.0 \\ \hline
|
||||
Blue & 450nm - 500nm & 2.5 - 3.7 \\ \hline
|
||||
Green & 500nm - 570nm & 1.9 - 4.0 \\ \hline
|
||||
Yellow & 570nm - 590nm & 2.1 - 2.2 \\ \hline
|
||||
Orange & 590nm - 610nm & 2.0 - 2.1 \\ \hline
|
||||
Red & 610nm - 760nm & 1.6 - 2.0 \\ \hline
|
||||
IR & \textgreater 760nm & \textgreater 1.9 \\ \hline
|
||||
\end{tabular} \\
|
||||
|
||||
\item Low pass filter
|
||||
\subitem A type of AC filter that eliminates high frequencies.\\
|
||||
\item Low side switch
|
||||
\subitem A type of switch where the switching device is placed between the main circuit and the common path.\\
|
||||
\item Lumped Parameter
|
||||
\subitem A simplification technique that lumps device properties into a point-like object. \\
|
||||
\\
|
||||
|
||||
|
||||
% ========== M ============
|
||||
\IEEEPARstart{M}{ike}\\
|
||||
\item Mega-
|
||||
\subitem The metric prefix meaning one million ($10^{6}$) times the base unit.\\
|
||||
\item Memcapacitor
|
||||
\subitem A passive circuit element whose capacitance is voltage and charge dependent. \\
|
||||
\item Meminductor
|
||||
\subitem A passive circuit device whose inductance is dependent on current or flux. \\
|
||||
\item Memristor
|
||||
\subitem A charge dependent resistor with the behaviour $V(t) =\ M(q(t)) I(t)$.\\
|
||||
\item Metal Oxide Varistor (MOV)
|
||||
\subitem A type of varistor made from sintered ceramic metal-oxide materials. \\
|
||||
\item Micro-
|
||||
\subitem The metric prefix meaning one millionth ($10^{-6}$) of the base unit.\\
|
||||
\item Milli-
|
||||
\subitem The metric prefix meaning one thousandth ($10^{-3}$) of the base unit.\\
|
||||
\item MOSFET
|
||||
\subitem Metal Oxide Semiconducting Field Effect Transistor. Voltage ($V_{GS}$) controls the current ($I_D$). \\
|
||||
|
||||
% ========== N ============
|
||||
\IEEEPARstart{N}{ovember}\\
|
||||
\item Nano-
|
||||
\subitem The metric prefix meaning one billionth ($10^{-9}$) of the base unit.\\
|
||||
\item Negative Feedback
|
||||
\subitem A way to control the output behaviour of an operational amplifier by feeding the output into the inverting terminal. Passive devices may optionally be present between the output and inverting terminal to change the output behaviour further.\\
|
||||
\item Noise
|
||||
\subitem Signal disturbances that are not part of an intentional signal. \\
|
||||
\item Noise Figure
|
||||
\subitem The noise difference between an actual device and an ideal device with the same gain and bandwidth; measured in decibels. \\
|
||||
\item Normalized response
|
||||
\subitem \\
|
||||
|
||||
% ========== O ============
|
||||
\IEEEPARstart{O}{scar}\\
|
||||
\item Ohm ($\Omega$)
|
||||
\subitem The base SI unit of resistance. \\
|
||||
\item Omega ($\omega$)
|
||||
\subitem Symbol indicating angular frequency\\
|
||||
\item Operational Amplifier (Op-Amp)
|
||||
\subitem An active device that enables isolation, comparison, and amplification.\\
|
||||
\item Over Voltage ($V_O$)
|
||||
\subitem When $V_{GS}-V_t > 0$. \\
|
||||
\item Oxide Capacitance ($C_{OX}$)
|
||||
\subitem The capacitance of the oxide layer of a MOSFET. \\
|
||||
\item Oxide Thickness ($t_{OX}$)
|
||||
\subitem The thickness of the oxide layer of a MOSFET. \\
|
||||
|
||||
|
||||
% ========== P ============
|
||||
\IEEEPARstart{P}{apa}\\
|
||||
\item Pentode
|
||||
\subitem A five-terminal power vacuum tube device with an anode/plate (P), cathode (K), control grid (G1), screen grid (G2), and suppressor (G3). \\
|
||||
\item Phase Splitter
|
||||
\subitem A device that splits an input signal into two output signals with a phase offset of $180^\circ$. \\
|
||||
\item Photoelectric Effect
|
||||
\subitem A material phenomenon in which a voltage is generated when exposed to light. \\
|
||||
\item Pico-
|
||||
\subitem The metric prefix meaning one trillionth ($10^{-12}$) of the base unit.\\
|
||||
\item Positive Feedback
|
||||
\subitem In the context of an operational amplifier, it implies some kind of connection from the output terminal to the non-inverting input. \\
|
||||
\item Power Supply
|
||||
\subitem A nonlinear circuit that can reliably supply a specific voltage or specific current. \\
|
||||
\item Power Supply Distribution
|
||||
\subitem \\
|
||||
\item Push-Pull Configuration
|
||||
\subitem A basic circuit shape that uses a pair of active devices to enhance load capacity and switching speed. \\
|
||||
|
||||
% ========== Q ============
|
||||
\IEEEPARstart{Q}{uebec}\\\\
|
||||
\item Quiescent
|
||||
\subitem When a device is dissapating power without a signal input.\\
|
||||
|
||||
% ========== R ============
|
||||
\IEEEPARstart{R}{omeo}\\
|
||||
\item Rectification
|
||||
\subitem Forcing polarity on a signal.\\
|
||||
\item Reactancea
|
||||
\subitem The complex part of an impedance; measured in ohms. \\
|
||||
\item Resistance
|
||||
\subitem The measure of how much voltage is required to drive an electric current through an object; measured in ohms; \\
|
||||
\item Resistor
|
||||
\subitem A purely resistive linear device with no transient properties.\\
|
||||
\item Rheostat
|
||||
\subitem A type of variable resistor used to control power. \\
|
||||
|
||||
% ========== S ============
|
||||
\IEEEPARstart{S}{ierra}\\
|
||||
\item Sallen-Key LPF Circuit
|
||||
\subitem A 2-pole circuit with a non-inverting amplifier. \\
|
||||
\item Saturation (for BJTs)
|
||||
\subitem The regime of operation for BJTs where increasing $V_{BE}$ increases $I_C$. \\
|
||||
\item Saturation (for MOSFETs)
|
||||
\subitem The regime of operation for MOSFETs where $V_{GS}$ is positive and increasing ${V_DS}$ does not affect $I_D$ \\
|
||||
\item Schottky Diode
|
||||
\subitem A low forward voltage, high switching speed, high reverse leakage current diode. \\
|
||||
\item Screen Grid
|
||||
\subitem A terminal found on tetrode and pentode tubes used to decrease the effects of grid-to-plate capacitance. \\
|
||||
\item Shielding
|
||||
\subitem A piece of metal, wrapped around a wire or electronic device used to minimize EMI noise and radiation. \\
|
||||
\item Silicon Diode
|
||||
\subitem A type of low-power diode made of silicon. Forward voltage ($V_F$) is 0.6 to 1.0 volts with 0.7 volts being quite common. The reverse breakdown voltage of a silicon diode is usually several tens of volts (70v to 100v is common), \\
|
||||
\item Summing Amplifier
|
||||
\subitem A type of amplifier that adds voltages: can be inverting or non-inverting \\
|
||||
\item Suppressor Grid
|
||||
\subitem A terminal added to a tetrode to create a pentode and eliminate the dynatron (negative resistance) regime of operation. \\
|
||||
\item Susceptance
|
||||
\subitem The reciprocal of reactance; measured in siemens. \\
|
||||
% ========== T ============
|
||||
\IEEEPARstart{T}{ango}\\
|
||||
\item Temperature (T)
|
||||
\subitem The total kinetic energy of a system. It often affects the behaviour of devices, notably resistors, diodes, and transistors. \\
|
||||
\item Tetrode ("Space Charge" Tube)
|
||||
\subitem A four-terminal power tube device with a negative resistance regime. Its four terminals are the anode/plate (P), the cathode (K), the control grid (G1), and the screen grid (G2). \\
|
||||
\item Thermal Model Electronics
|
||||
\subitem A way to model the thermal behavior of electronic devices using circuit schematic symbols.\\
|
||||
\item Threshold Voltage ($V_t$)
|
||||
\subitem The minimum $V_{GS}$ required to turn a MOSFET on. \\
|
||||
\item Transformer
|
||||
\subitem An inducting device that can step up or step down AC voltage while having little power loss. \\
|
||||
\item Transistor
|
||||
\subitem A three terminal, active, semiconducing device that acts as an electronic switch.\\
|
||||
\item Triaxial Cable
|
||||
\subitem A cable with three concentric conductors used to minimize EMI. \\
|
||||
\item Triode (Audion Tube)
|
||||
\subitem A voltage controlled current source tube device with three terminals: the cathode, the anode, and the gate. \\
|
||||
\item Triode Region
|
||||
\subitem The operating regime of a MOSFET where increasing $V_{DS}$ increases $I_D$. It is also the name of a power-hungry tube device with amplifying properties. \\
|
||||
\item Tube (Vacuum Tube)
|
||||
\subitem A power electronics device that operates within a glass enclosure with all air evacuated. The device uses the heat generated to eable its behavior. These devices are often characterized by their distinct orange glow. \\
|
||||
\item Twisted pair
|
||||
\subitem Two wires wrapped around one another to minimize loop area, thereby decreasing EMI. \\
|
||||
|
||||
% ========== U ============
|
||||
\IEEEPARstart{U}{niform}\\
|
||||
\item Unipolar
|
||||
\subitem Simply a single supply voltage and ground reference. As opposed to Bipolar with + and - supply voltages. \\
|
||||
|
||||
% ========== V ============
|
||||
\IEEEPARstart{V}{ictor}\\
|
||||
\item V-I Response
|
||||
\subitem A visual comparison of the voltage and current response of an electronic device.\\
|
||||
\item Varistor (Voltage Dependent Resistor (VDR))
|
||||
\subitem A non-ohmic, nonlinear resistive device that exhibits high resistance at lower voltages and low resistance at higher voltages. \\
|
||||
\item Very Large-Scale Integration (VLSI)
|
||||
\subitem The process by which millions or billions of CMOS devices are combined into a single IC. \\
|
||||
\item Virtual Ground
|
||||
\subitem A voltage that is very close to ground caused by amplifier feedback. \\
|
||||
\item Voltage Swing
|
||||
\subitem The difference between maximum output voltage and minimum output voltage. It acts as a way of measuring how close to a rail output voltage can be driven. \\
|
||||
% ========== W ============
|
||||
\IEEEPARstart{W}{hiskey}\\
|
||||
\item Width of Channel (W)
|
||||
\subitem The width of a MOSFET channel. \\
|
||||
\item Williamson Amplifier
|
||||
\subitem A famous high-fidelity tube-based audio amplifier. \\
|
||||
|
||||
% ========== X ============
|
||||
\IEEEPARstart{X}{-ray}\\
|
||||
\\
|
||||
|
||||
% ========== Y ============
|
||||
\IEEEPARstart{Y}{ankee}\\
|
||||
\item Y-Configuration (Wye Configuration)
|
||||
\subitem Three resistors meeting at a junction. It can be transformed into a delta configuration using the following method: \\ \\
|
||||
$R_{AB} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_C}$ \\ \\
|
||||
$R_{AC} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_B}$ \\ \\
|
||||
$R_{BC} = \frac{R_AR_B+R_AR_C+R_BR_C}{R_A}$ \\
|
||||
|
||||
% ========== Z ============
|
||||
\IEEEPARstart{Z}{ulu}\\
|
||||
\item Zener Diode
|
||||
\subitem A special type of diode with a set reverse breakdown voltage.\\
|
||||
\item Zener Shunt Regulator
|
||||
\subitem A type of power regulator that clamps voltage using a Zener Diode.\\
|
||||
\end{enumerate}
|
||||
\end{document}
|
||||
|
||||
|
||||
|
||||
|
||||
|
15513
4th-Semester-Spring-2023/Electronics/Lab01/Lab01.dat.ngspice
Executable file
25
4th-Semester-Spring-2023/Electronics/Lab01/Lab01.dpl
Executable file
@ -0,0 +1,25 @@
|
||||
<Qucs Schematic 1.0.0>
|
||||
<Properties>
|
||||
<View=-99,0,1648,905,1,212,2>
|
||||
<Grid=10,10,0>
|
||||
<DataSet=Lab01.dat>
|
||||
<DataDisplay=Lab01.sch>
|
||||
<OpenDisplay=1>
|
||||
<Script=Lab01.m>
|
||||
<RunScript=0>
|
||||
<showFrame=0>
|
||||
<FrameText0=Title>
|
||||
<FrameText1=Drawn By:>
|
||||
<FrameText2=Date:>
|
||||
<FrameText3=Revision:>
|
||||
</Properties>
|
||||
<Symbol>
|
||||
</Symbol>
|
||||
<Components>
|
||||
</Components>
|
||||
<Wires>
|
||||
</Wires>
|
||||
<Diagrams>
|
||||
</Diagrams>
|
||||
<Paintings>
|
||||
</Paintings>
|
49
4th-Semester-Spring-2023/Electronics/Lab01/Lab01.sch
Executable file
@ -0,0 +1,49 @@
|
||||
<Qucs Schematic 1.0.0>
|
||||
<Properties>
|
||||
<View=-305,0,1571,859,1,0,0>
|
||||
<Grid=10,10,1>
|
||||
<DataSet=Lab01.dat>
|
||||
<DataDisplay=Lab01.dpl>
|
||||
<OpenDisplay=1>
|
||||
<Script=Lab01.m>
|
||||
<RunScript=0>
|
||||
<showFrame=0>
|
||||
<FrameText0=Title>
|
||||
<FrameText1=Drawn By:>
|
||||
<FrameText2=Date:>
|
||||
<FrameText3=Revision:>
|
||||
</Properties>
|
||||
<Symbol>
|
||||
</Symbol>
|
||||
<Components>
|
||||
<R R1 1 450 290 -26 15 0 0 "1M Ohm" 1 "26.85" 0 "0.0" 0 "0.0" 0 "26.85" 0 "US" 0>
|
||||
<GND * 1 280 370 0 0 0 0>
|
||||
<GND * 1 640 380 0 0 0 0>
|
||||
<GND * 1 780 380 0 0 0 0>
|
||||
<R R2 1 640 350 15 -26 0 1 "9M Ohm" 1 "26.85" 0 "0.0" 0 "0.0" 0 "26.85" 0 "US" 0>
|
||||
<C C2 1 780 350 17 -26 0 1 "11 pF" 1 "" 0 "neutral" 0>
|
||||
<Vrect V1 1 280 340 18 -26 0 1 "5 V" 1 "1 ms" 1 "1 ms" 1 "1 ns" 0 "1 ns" 0 "0 ns" 0>
|
||||
<C C1 1 450 200 -26 17 0 0 "1.2 pF" 1 "" 0 "neutral" 0>
|
||||
<.SW SW1 1 -120 230 0 75 0 0 "TR1" 1 "lin" 1 "C1" 1 "0.5 pF" 1 "50 pF" 1 "10" 1 "false" 0>
|
||||
<.TR TR1 1 50 230 0 75 0 0 "lin" 1 "0" 1 "10 ms" 1 "1001" 0 "Trapezoidal" 0 "2" 0 "1 ns" 0 "1e-16" 0 "150" 0 "0.001" 0 "1 pA" 0 "1 uV" 0 "26.85" 0 "1e-3" 0 "1e-6" 0 "1" 0 "CroutLU" 0 "no" 0 "yes" 0 "0" 0>
|
||||
</Components>
|
||||
<Wires>
|
||||
<280 290 280 310 "" 0 0 0 "">
|
||||
<280 290 390 290 "" 0 0 0 "">
|
||||
<640 290 640 320 "" 0 0 0 "">
|
||||
<480 290 510 290 "" 0 0 0 "">
|
||||
<640 290 780 290 "" 0 0 0 "">
|
||||
<780 290 780 320 "" 0 0 0 "">
|
||||
<510 290 640 290 "" 0 0 0 "">
|
||||
<480 200 510 200 "" 0 0 0 "">
|
||||
<510 200 510 290 "" 0 0 0 "">
|
||||
<390 200 420 200 "" 0 0 0 "">
|
||||
<390 290 420 290 "" 0 0 0 "">
|
||||
<390 200 390 290 "" 0 0 0 "">
|
||||
<280 290 280 290 "V_in" 310 260 0 "">
|
||||
<780 290 780 290 "V_out" 810 260 0 "">
|
||||
</Wires>
|
||||
<Diagrams>
|
||||
</Diagrams>
|
||||
<Paintings>
|
||||
</Paintings>
|
2
4th-Semester-Spring-2023/Electronics/Lab02/.vscode/ltex.dictionary.en-US.txt
vendored
Executable file
@ -0,0 +1,2 @@
|
||||
Astable
|
||||
Multivibrator
|
32
4th-Semester-Spring-2023/Electronics/Lab02/Lab02Report.aux
Executable file
@ -0,0 +1,32 @@
|
||||
\relax
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {I}Background}{1}\protected@file@percent }
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {II}Introduction}{1}\protected@file@percent }
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {III}Slew Rate}{1}\protected@file@percent }
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {IV}The Unity Gain Follower}{1}\protected@file@percent }
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {1}{\ignorespaces short}}{1}\protected@file@percent }
|
||||
\newlabel{fig:osc_slew_rate}{{1}{1}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {2}{\ignorespaces short}}{1}\protected@file@percent }
|
||||
\newlabel{fig:sch_unity_gain}{{2}{1}}
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {V}Controlling the Gain}{1}\protected@file@percent }
|
||||
\newlabel{eqn:op_amp_out}{{1}{1}}
|
||||
\newlabel{eqn:inverting_amp_out}{{2}{1}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {3}{\ignorespaces short}}{2}\protected@file@percent }
|
||||
\newlabel{fig:sch_inverting_amp}{{3}{2}}
|
||||
\newlabel{eqn:non-inverting_amp_out}{{3}{2}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {4}{\ignorespaces short}}{2}\protected@file@percent }
|
||||
\newlabel{fig:osc_non-inverting}{{4}{2}}
|
||||
<<<<<<< HEAD
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {VI}The Astable Multivibrator}{2}{}\protected@file@percent }
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {5}{\ignorespaces short}}{2}{}\protected@file@percent }
|
||||
\newlabel{fig:sch_multivibrator}{{5}{2}}
|
||||
\newlabel{eqn:astable_period}{{4}{2}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {6}{\ignorespaces short}}{2}{}\protected@file@percent }
|
||||
=======
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {VI}The Astable Multivibrator}{2}\protected@file@percent }
|
||||
\newlabel{eqn:astable_period}{{4}{2}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {5}{\ignorespaces short}}{2}\protected@file@percent }
|
||||
\newlabel{fig:sch_multivibrator}{{5}{2}}
|
||||
\@writefile{lof}{\contentsline {figure}{\numberline {6}{\ignorespaces short}}{2}\protected@file@percent }
|
||||
>>>>>>> e655e0a10973d6267dbea7832d3c4d5c90a8b5e8
|
||||
\newlabel{fig:osc_multivibrator}{{6}{2}}
|
||||
\@writefile{toc}{\contentsline {section}{\numberline {VII}Conclusion}{2}\protected@file@percent }
|
87
4th-Semester-Spring-2023/Electronics/Lab02/Lab02Report.fdb_latexmk
Executable file
@ -0,0 +1,87 @@
|
||||
<<<<<<< HEAD
|
||||
# Fdb version 4
|
||||
["pdflatex"] 1683765888 "Lab02Report.tex" "Lab02Report.pdf" "Lab02Report" 1683765888 0
|
||||
"/home/sharpe/.texlive2021/texmf-var/web2c/pdftex/pdflatex.fmt" 1679584289 1345251 b7d83a43d87faffa09e2301978214da4 ""
|
||||
"/usr/share/texlive/texmf-dist/fonts/enc/dvips/base/8r.enc" 1661385782 4850 80dc9bab7f31fb78a000ccfed0e27cab ""
|
||||
=======
|
||||
# Fdb version 3
|
||||
["pdflatex"] 1683682227 "Lab02Report.tex" "Lab02Report.pdf" "Lab02Report" 1683682228
|
||||
"/etc/texmf/web2c/texmf.cnf" 1682035345 475 c0e671620eb5563b2130f56340a5fde8 ""
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"/usr/share/texlive/texmf-dist/fonts/enc/dvips/base/8r.enc" 1165713224 4850 80dc9bab7f31fb78a000ccfed0e27cab ""
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||||
>>>>>>> e655e0a10973d6267dbea7832d3c4d5c90a8b5e8
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||||
"/usr/share/texlive/texmf-dist/fonts/map/fontname/texfonts.map" 1577235249 3524 cb3e574dea2d1052e39280babc910dc8 ""
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"/usr/share/texlive/texmf-dist/fonts/tfm/adobe/times/ptmbi8r.tfm" 1136768653 4480 10409ed8bab5aea9ec9a78028b763919 ""
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(generated)
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=======
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>>>>>>> e655e0a10973d6267dbea7832d3c4d5c90a8b5e8
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>>>>>>> e655e0a10973d6267dbea7832d3c4d5c90a8b5e8
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\documentclass[journal]{IEEEtran}
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\usepackage{graphicx}
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\usepackage{amsmath}
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\usepackage{array, tabularx}
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\title{Operational Amplifiers: Behaviors \& Implementation}
|
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\author{Aidan Sharpe \& Elise Heim}
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\begin{document}
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\maketitle
|
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||||
\begin{abstract}
|
||||
In this lab, several behaviors and topologies of operational amplifiers were tested. Behaviors analyzed include isolation, positive \& negative feedback, and comparison. Topologies used include the unity gain follower, the non-inverting amplifier, the astable multivibrator, and the differential amplifier.
|
||||
\end{abstract}
|
||||
|
||||
\section{Background}
|
||||
\IEEEPARstart{A}{mplifiers} can be found almost everywhere. In just your day-to-day life you will use them in your phone, in your car, and in undersea communications cables. They are a critical technology globally, necessary for many products in the modern world.
|
||||
|
||||
Amplifiers perform a simple task: boosting (\textit{amplifying}) a signal. There are several varieties of amplifiers, but for many purposes, the common operational amplifier is used.
|
||||
|
||||
\section{Introduction}
|
||||
Operational amplifiers, commonly referred to as simply "op-amps" are a type of amplifier with several key properties: isolation, comparison, and amplifier gain. By applying these properties, several rather nifty behaviors emerge.
|
||||
|
||||
The following is an overview of several applications and behaviors of op-amps as observed in a laboratory setting.
|
||||
|
||||
\section{Slew Rate}
|
||||
The slew rate of an op-amp is the rate at which it can switch from one voltage to another. As seen in \textit{Fig. \ref{fig:osc_slew_rate}}, voltage does not instantaneously switch, rather it climbs at a steady rate from one point to another. By analyzing the rate of change of voltage with respect to time, the slew rate of any op-amp can be calculated. Taking a closer look at \textit{Fig. \ref{fig:osc_slew_rate}}, the slew rate comes to $13 V \cdot \mu s^{-1}$.
|
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\begin{figure}[h]
|
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\includegraphics[scale=0.3]{Media/slew_rate.png}
|
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\caption[short]{Analyzing Slew Rate}
|
||||
\label{fig:osc_slew_rate}
|
||||
\end{figure}
|
||||
|
||||
|
||||
\section{The Unity Gain Follower}
|
||||
The unity gain follower is the topology that extracts the pure essence of the isolation property of an op-amp---they can emulate input behavior at the output without affecting the input. They are extremely useful when input electronics are sensitive or their properties must be protected.
|
||||
|
||||
As seen in \textit{Fig. \ref{fig:sch_unity_gain}}, the output signal is identical to the input signal. However, they are not connected. The op-amp is driving the output signal with a separate power supply and mimicking the signal coming in.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.45]{Media/Voltage-follower-example.png}
|
||||
\caption[short]{Unity Gain Follower Schematic}
|
||||
\label{fig:sch_unity_gain}
|
||||
\end{figure}
|
||||
|
||||
\section{Controlling the Gain}
|
||||
The amplifier gain, $A$ of an operational amplifier is an arbitrary, often quite high, value that is determined through the manufacturing process. It is very difficult to control during production, but as long as it is a reasonably high value, the exact number becomes irrelevant during application.
|
||||
|
||||
Looking at \textit{Eqn. \ref{eqn:op_amp_out}}, the amplifier gain, $A$, plays a role in the output. However, this only occurs when there is no feedback.
|
||||
|
||||
\begin{equation}
|
||||
V_{out} = A(V_P - V_N)
|
||||
\label{eqn:op_amp_out}
|
||||
\end{equation}
|
||||
|
||||
When there \textit{is} feedback, the amplifier gain plays a negligible role in $V_{out}$, given that $A$ is a sufficiently high value. This is because in a circuit with negative feedback, the amount the output voltage is affected by the amplifier gain is an inverse proportion. A simple inverting amplifier, shown in \textit{Fig. \ref{fig:sch_inverting_amp}} has an output voltage determined through \textit{Eqn. \ref{eqn:inverting_amp_out}}.
|
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\begin{figure}[h]
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||||
\includegraphics[scale=0.4]{Media/main-qimg-ff6c97a856f809327a49099f4cc0167e.jpeg}
|
||||
\caption[short]{Inverting Amplifier Schematic}
|
||||
\label{fig:sch_inverting_amp}
|
||||
\end{figure}
|
||||
|
||||
\begin{equation}
|
||||
V_{out} = -V_{in}\left(\frac{R_f}{R_1}\right)
|
||||
\label{eqn:inverting_amp_out}
|
||||
\end{equation}
|
||||
|
||||
\begin{equation}
|
||||
V_{out} = V_{in}\left(1 + \frac{R_f}{R_1}\right)
|
||||
\label{eqn:non-inverting_amp_out}
|
||||
\end{equation}
|
||||
|
||||
In comparing \textit{Eqn. \ref{eqn:inverting_amp_out}} and \textit{Eqn. \ref{eqn:non-inverting_amp_out}} it becomes obvious that each setup has its pros and cons. In both cases, gain is affected only by the values of $R_1$ and $R_f$, so it can be fine-tuned to a specific value. However, while the math is a little simpler of the inverting case, the output is, well, inverted. On the other hand, the math for the non-inverting case is ever-so-slightly more complex, but the signal has the same polarity.
|
||||
|
||||
For example, one task was to construct an amplifier with a gain of positive ten. Again referencing \textit{Eqn. \ref{eqn:non-inverting_amp_out}} the ratio of $R_f:R_1$ must be 9 since the gain is one greater than the ratio. If the task had rather been to build an amplifier with a gain of negative ten, calculating a $1:10$ ratio of resistor values would have been a little easier.
|
||||
|
||||
After constructing the non-inverting amplifier, as seen in \textit{Fig. \ref{fig:osc_non-inverting}}, the signal was spot on. The input was 2.4V peak to peak and the output was 20.7V peak to peak: very close to the tenfold desired increase.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.3]{Media/wiggle_10x.png}
|
||||
\caption[short]{Analyzing Non-inverting Amplifier Output}
|
||||
\label{fig:osc_non-inverting}
|
||||
\end{figure}
|
||||
|
||||
\section{The Astable Multivibrator}
|
||||
The astable multivibrator is a really helpful circuit. It uses a combination of the comparison property of the op-amp and the transient response property of a capacitor to create an oscillating square wave. Its schematic and output behavior are seen in \textit{Fig. \ref{fig:sch_multivibrator}}. We chose our component values to get 500Hz oscillations, and we were able to achieve 507Hz---a value well within the margin of error of our components.
|
||||
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||||
\begin{figure}[h]
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||||
\includegraphics[scale=0.3]{Media/Op-amp-Astable-Multivibrator-Working.png}
|
||||
\caption[short]{Astable Multivibrator Schematic and Output}
|
||||
\label{fig:sch_multivibrator}
|
||||
\end{figure}
|
||||
|
||||
\begin{equation}
|
||||
T = 2R_3C \times \ln\left({\frac{1+\beta}{1-\beta}}\right)
|
||||
\label{eqn:astable_period}
|
||||
\end{equation}
|
||||
\\
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||||
Where:
|
||||
\begin{tabularx}{\linewidth}{>{$}r<{$} @{${}={}$} X}
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||||
\beta & $\frac{R_2}{R_1 + R_2}$;\\
|
||||
T & Period of oscillation\\
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||||
\end{tabularx}
|
||||
\\
|
||||
\\
|
||||
|
||||
Given \textit{Eqn. \ref{eqn:astable_period}}, choosing a value, $\beta$, such that $\frac{1+\beta}{1-\beta} \approx e$ will make it possible to tune the period of oscillation using $R_3$ alone. To achieve this, $R_2$ should be about $86\%$ of the resistance of $R_1$.
|
||||
|
||||
Lab resistors have an uncertainty of $\pm5\%$. Using a $39 K\Omega$ resistor for $R_1$ and a $33 K\Omega$ resistor for $R_2$ will give us a $\beta$ of approximately $e$.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.3]{Media/astable_500hz.png}
|
||||
\caption[short]{Analyzing Astable Multivibrator Output}
|
||||
\label{fig:osc_multivibrator}
|
||||
\end{figure}
|
||||
|
||||
\section{Conclusion}
|
||||
It should be clear that the unique properties of operational amplifiers have a diverse set of applications. The ability to isolate each side of the amplifier means that the behaviors on either side do not affect each other. The comparison behavior allows for fine-tuning output gain and creating an oscillating output from a direct current source. These are just a few isolated (no pun intended) use cases for op-amps, and their behaviors can be extended into many useful applications.
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\end{document}
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BIN
4th-Semester-Spring-2023/Electronics/Lab04/report.pdf
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BIN
4th-Semester-Spring-2023/Electronics/Lab04/report.synctex.gz
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57
4th-Semester-Spring-2023/Electronics/Lab04/report.tex
Executable file
@ -0,0 +1,57 @@
|
||||
\documentclass[journal]{IEEEtran}
|
||||
|
||||
\usepackage{graphicx}
|
||||
|
||||
\title{Bipolar Junction Transistors: Characteristic Curves and Amplifying Signals}
|
||||
|
||||
\begin{document}
|
||||
\maketitle
|
||||
|
||||
\section{Background (Elise Heim)}
|
||||
Bipolar junction transistors, or BJTs, may be been developed more than half a century ago, but they are still widely used today. They can be found in cellphones, televisions, computers, and so much more. BJTs are so commonly used because of their variety of applications, including as an amplifier, filter, rectifier, oscillator, or even a switch.
|
||||
|
||||
\section{Introduction (Elise Heim)}
|
||||
BJTs are three terminal devices wherein the emitter to collector current is controlled by base current. Unlike unipolar transistors, which are comprised of only one type of semiconductor, BJTs include both positive (P) and negative (N) semiconductors. The three terminals of a BJT are referred to as the base, collector, and emitter. For an NPN BJT, if a positive voltage is placed across the collector and emitter ($V_{CE}$), and some current $I_B$ is passed from the base to the emitter $I_{BE}$, current is able to flow from the collector to emitter $I_{CE}$. The greater the base current, the greater the current out the emitter.
|
||||
|
||||
\section{Characteristic Curves (Aidan Sharpe)}
|
||||
The characteristic curve of a BJT is a family of curves that describe the relationship between the input base current ($I_B$) and the input voltage between the collector and the emitter ($V_{CE}$) with the output collector current ($I_C$). Importantly, there are two input variables, that being $I_B$ and $V_{CE}$. An ideal characteristic curve for a BJT is seen in \textit{Fig.} \ref{fig:ideal_cc}.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.42]{media/characteristic_curve.png}
|
||||
\caption[short]{Ideal Characteristic Curve}
|
||||
\label{fig:ideal_cc}
|
||||
\end{figure}
|
||||
|
||||
Each color represents a different input base current, in this case, values range between 0mA and 5mA. Additionally, sweeping along the horizontal axis, is the input voltage between the collector and emitter ($V_{CE}$). There are three types of behavior or regions to focus on here. First is the cut-off region. In this region, $I_B$ is 0mA, and no matter what $V_{CE}$ is applied, $I_C$ remains 0mA. The second is the saturation region. In this region, $I_B$ is positive, and a small change to $V_{CE}$ results in a large change to $I_C$. Looking at \textit{Fig.} \ref{fig:ideal_cc}, the saturation region has a steep positive slope. The third and final region is the active region. The active region is the area where $I_B$ is positive, but changing $V_{CE}$ has little effect on the current $I_C$. Looking again at \textit{Fig. \ref{fig:ideal_cc}}, the active region looks like a collection of nearly horizonatal lines.
|
||||
|
||||
The characteristic curves of a BJT were tested in the lab using a breadboard setup to attain small base input currents and larger collector currents. Sweeping about 30 input datapoints, parametrically varying $I_B$ and $V_CE$ the albeit rather uninspiring curves seen in \textit{Fig. \ref{fig:experimental_cc}}.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.25]{media/ExperimentalCurves.png}
|
||||
\caption[short]{Experimental Results}
|
||||
\label{fig:experimental_cc}
|
||||
\end{figure}
|
||||
|
||||
Since the experimental curves only slightly resemble the characteristic curves of a BJT, there was obviously some form of error here. Possible sources for error could range from too small of resistor values, to inaccurate readings from the digital multimeter due to high precision requirements, to a misconfiguration of the experiment. After brief discussion with the professor, the most likely culprit is that the resistor regulating $I_B$ was too small and our input currents were throwing off our results.
|
||||
|
||||
\section{BJT Amplifiers (Aidan Sharpe)}
|
||||
Apart from making cool looking curves, BJTs can serve a practical purpose by acting as amplifiers and electrically controlled switches. Here, we will take a closer look at using BJTs as an amplifier. Take a look back at \textit{Fig. \ref{fig:ideal_cc}}. Notice the scale of $I_B$ compared to the scale of $I_C$; it is roughly 2 orders of magnitude more. This scale from base input current to collector current is usually referred to as $\beta$ or $h_{FE}$ on data sheets, and for most BJTs it is usually in the ballpark of 100 to 200.
|
||||
|
||||
Setting up a BJT amplifier is quite easy. For this example we will use a standard NPN BJT in a common emitter arrangement seen in \textit{Fig. \ref{fig:com_emit}}. We want to amplify voltage, not current, so we need to bias the circuit with some preset DC values. To do so, we take into account the rail voltages, in this case, the top rail is 12v and the emitter rail is set to 4v. To get the most out of the amplifier and avoid clipping the signal it is smart to pick an output bias voltage somewhere close to halfway between the rails, in this case, 8v.
|
||||
|
||||
\begin{figure}[h]
|
||||
\includegraphics[scale=0.4]{media/CommonEmitter.png}
|
||||
\caption[short]{Common Emitter Amplifier Schematic}
|
||||
\label{fig:com_emit}
|
||||
\end{figure}
|
||||
|
||||
To set up the bias voltage, we have to consider $I_C = \beta I_B$. Therefore, to determine $I_C$, we will start by defining $I_B$. Arbitrarily choosing $R_2$ as $100k \Omega$, knowing that we want the emitter voltage to be 4v and there will be a 0.7v drop from base to emitter, the base current will be $\frac{12 - (4 + 0.7)}{100k}$, or 73uA. Approximating $\beta$ at 200, $I_C$ will be about 15mA. Knowing this, a desired voltage drop across the $R_1$ is 4v to bias the collector voltage at 8v, meaning $R_1$ must be $\frac{4v}{15mA}$, or about $270 \Omega$. Additionally, since the emitter current is very close to the collector current, we can use another $270 \Omega$ resistor for $R_3$ to set the emitter voltage to 4v.
|
||||
|
||||
Now that that's out of the way, we can apply a voltage to the base and see it amplified at the collector.
|
||||
|
||||
\section{Conclusion (Elise Heim)}
|
||||
So now we have seen what a BJT can do. The active region of the family of curves allows for amplification, as demonstrated. It is as simple as hopping from one line in the family to the next, using a greater current.
|
||||
|
||||
An even more common application of BJTs was not included in this lab. This utilizes the cutoff and saturation regions of operation. This allows for the BJT to be used as a switch. There are countless applications for switches, especially ones that are controlled by current. By investigating the family of curves of a BJT, one can recognize which regimes are best suited for different jobs.
|
||||
|
||||
\end{document}
|
5
4th-Semester-Spring-2023/Electronics/Lecture-Feb07/notes.md
Executable file
@ -0,0 +1,5 @@
|
||||
# Electronics I Lecture Notes: February 7th, 2023
|
||||
|
||||
- EDA: Electronic Design Automation
|
||||
|
||||
|
4
4th-Semester-Spring-2023/Electronics/Lecture-Feb14/.vscode/ltex.dictionary.en-US.txt
vendored
Executable file
@ -0,0 +1,4 @@
|
||||
Zener
|
||||
Schottky
|
||||
Veristor
|
||||
Memristor
|
3
4th-Semester-Spring-2023/Electronics/Lecture-Feb14/notes.md
Executable file
@ -0,0 +1,3 @@
|
||||
# Electronics I Lecture Notes: February 14, 2023
|
||||
|
||||
## Bipolar Junction Transistors
|
3346
4th-Semester-Spring-2023/Electronics/Lecture-Jan31/Comparator noise.dat.ngspice
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25
4th-Semester-Spring-2023/Electronics/Lecture-Jan31/Comparator noise.dpl
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|
||||
<Qucs Schematic 1.0.0>
|
||||
<Properties>
|
||||
<View=0,0,800,800,1,0,0>
|
||||
<Grid=10,10,0>
|
||||
<DataSet=Comparator noise.dat>
|
||||
<DataDisplay=Comparator noise.sch>
|
||||
<OpenDisplay=1>
|
||||
<Script=Comparator noise.m>
|
||||
<RunScript=0>
|
||||
<showFrame=0>
|
||||
<FrameText0=Title>
|
||||
<FrameText1=Drawn By:>
|
||||
<FrameText2=Date:>
|
||||
<FrameText3=Revision:>
|
||||
</Properties>
|
||||
<Symbol>
|
||||
</Symbol>
|
||||
<Components>
|
||||
</Components>
|
||||
<Wires>
|
||||
</Wires>
|
||||
<Diagrams>
|
||||
</Diagrams>
|
||||
<Paintings>
|
||||
</Paintings>
|
29
4th-Semester-Spring-2023/Electronics/Lecture-Jan31/Comparator noise.sch
Executable file
@ -0,0 +1,29 @@
|
||||
<Qucs Schematic 1.0.0>
|
||||
<Properties>
|
||||
<View=0,0,1148,800,1,0,0>
|
||||
<Grid=10,10,1>
|
||||
<DataSet=Comparator noise.dat>
|
||||
<DataDisplay=Comparator noise.dpl>
|
||||
<OpenDisplay=1>
|
||||
<Script=Comparator noise.m>
|
||||
<RunScript=0>
|
||||
<showFrame=0>
|
||||
<FrameText0=Title>
|
||||
<FrameText1=Drawn By:>
|
||||
<FrameText2=Date:>
|
||||
<FrameText3=Revision:>
|
||||
</Properties>
|
||||
<Symbol>
|
||||
</Symbol>
|
||||
<Components>
|
||||
<.TR TR1 1 50 90 0 75 0 0 "lin" 1 "0" 1 "10 ms" 1 "1001" 0 "Trapezoidal" 0 "2" 0 "1 ns" 0 "1e-16" 0 "150" 0 "0.001" 0 "1 pA" 0 "1 uV" 0 "26.85" 0 "1e-3" 0 "1e-6" 0 "1" 0 "CroutLU" 0 "no" 0 "yes" 0 "0" 0>
|
||||
<vTRNOISE V1 1 660 350 44 -26 0 1 "20n" 1 "0.5n" 1 "1.1" 1 "12p" 1 "0" 1 "0" 1 "0" 1>
|
||||
<GND * 1 660 380 0 0 0 0>
|
||||
</Components>
|
||||
<Wires>
|
||||
<660 320 660 320 "V_noise" 690 290 0 "">
|
||||
</Wires>
|
||||
<Diagrams>
|
||||
</Diagrams>
|
||||
<Paintings>
|
||||
</Paintings>
|
6
4th-Semester-Spring-2023/Electronics/Lecture-Jan31/README.md
Executable file
@ -0,0 +1,6 @@
|
||||
# Electronics I Lecture Notes: January 31st, 2023
|
||||
|
||||
|
||||
|
||||
|
||||
|
120
4th-Semester-Spring-2023/Electronics/Lm358.mod
Executable file
@ -0,0 +1,120 @@
|
||||
|
||||
|
||||
*//////////////////////////////////////////////////////////////////////
|
||||
* (C) National Semiconductor, Inc.
|
||||
* Models developed and under copyright by:
|
||||
* National Semiconductor, Inc.
|
||||
|
||||
*/////////////////////////////////////////////////////////////////////
|
||||
* Legal Notice: This material is intended for free software support.
|
||||
* The file may be copied, and distributed; however, reselling the
|
||||
* material is illegal
|
||||
|
||||
*////////////////////////////////////////////////////////////////////
|
||||
* For ordering or technical information on these models, contact:
|
||||
* National Semiconductor's Customer Response Center
|
||||
* 7:00 A.M.--7:00 P.M. U.S. Central Time
|
||||
* (800) 272-9959
|
||||
* For Applications support, contact the Internet address:
|
||||
* amps-apps@galaxy.nsc.com
|
||||
|
||||
*//////////////////////////////////////////////////////////
|
||||
*LM358 DUAL OPERATIONAL AMPLIFIER MACRO-MODEL
|
||||
*//////////////////////////////////////////////////////////
|
||||
*
|
||||
* connections: non-inverting input
|
||||
* | inverting input
|
||||
* | | positive power supply
|
||||
* | | | negative power supply
|
||||
* | | | | output
|
||||
* | | | | |
|
||||
* | | | | |
|
||||
.SUBCKT LM358/NS 1 2 99 50 28
|
||||
*
|
||||
*Features:
|
||||
*Eliminates need for dual supplies
|
||||
*Large DC voltage gain = 100dB
|
||||
*High bandwidth = 1MHz
|
||||
*Low input offset voltage = 2mV
|
||||
*Wide supply range = +-1.5V to +-16V
|
||||
*
|
||||
*NOTE: Model is for single device only and simulated
|
||||
* supply current is 1/2 of total device current.
|
||||
* Output crossover distortion with dual supplies
|
||||
* is not modeled.
|
||||
*
|
||||
****************INPUT STAGE**************
|
||||
*
|
||||
IOS 2 1 5N
|
||||
*^Input offset current
|
||||
R1 1 3 500K
|
||||
R2 3 2 500K
|
||||
I1 99 4 100U
|
||||
R3 5 50 517
|
||||
R4 6 50 517
|
||||
Q1 5 2 4 QX
|
||||
Q2 6 7 4 QX
|
||||
*Fp2=1.2 MHz
|
||||
C4 5 6 128.27P
|
||||
*
|
||||
***********COMMON MODE EFFECT***********
|
||||
*
|
||||
I2 99 50 75U
|
||||
*^Quiescent supply current
|
||||
EOS 7 1 POLY(1) 16 49 2E-3 1
|
||||
*Input offset voltage.^
|
||||
R8 99 49 60K
|
||||
R9 49 50 60K
|
||||
*
|
||||
*********OUTPUT VOLTAGE LIMITING********
|
||||
V2 99 8 1.63
|
||||
D1 9 8 DX
|
||||
D2 10 9 DX
|
||||
V3 10 50 .635
|
||||
*
|
||||
**************SECOND STAGE**************
|
||||
*
|
||||
EH 99 98 99 49 1
|
||||
G1 98 9 POLY(1) 5 6 0 9.8772E-4 0 .3459
|
||||
*Fp1=7.86 Hz
|
||||
R5 98 9 101.2433MEG
|
||||
C3 98 9 200P
|
||||
*
|
||||
***************POLE STAGE***************
|
||||
*
|
||||
*Fp=2 MHz
|
||||
G3 98 15 9 49 1E-6
|
||||
R12 98 15 1MEG
|
||||
C5 98 15 7.9577E-14
|
||||
*
|
||||
*********COMMON-MODE ZERO STAGE*********
|
||||
*
|
||||
*Fpcm=10 KHz
|
||||
G4 98 16 3 49 5.6234E-8
|
||||
L2 98 17 15.9M
|
||||
R13 17 16 1K
|
||||
*
|
||||
**************OUTPUT STAGE**************
|
||||
*
|
||||
F6 50 99 POLY(1) V6 300U 1
|
||||
E1 99 23 99 15 1
|
||||
R16 24 23 17.5
|
||||
D5 26 24 DX
|
||||
V6 26 22 .63V
|
||||
R17 23 25 17.5
|
||||
D6 25 27 DX
|
||||
V7 22 27 .63V
|
||||
V5 22 21 0.27V
|
||||
D4 21 15 DX
|
||||
V4 20 22 0.27V
|
||||
D3 15 20 DX
|
||||
L3 22 28 500P
|
||||
RL3 22 28 100K
|
||||
*
|
||||
***************MODELS USED**************
|
||||
*
|
||||
.MODEL DX D(IS=1E-15)
|
||||
.MODEL QX PNP(BF=1.111E3)
|
||||
*
|
||||
.ENDS
|
||||
*$
|
70
4th-Semester-Spring-2023/Electronics/March07.asc
Executable file
@ -0,0 +1,70 @@
|
||||
Version 4
|
||||
SHEET 1 880 680
|
||||
WIRE 272 144 208 144
|
||||
WIRE 400 144 336 144
|
||||
WIRE 48 192 48 160
|
||||
WIRE 48 192 0 192
|
||||
WIRE 144 192 48 192
|
||||
WIRE 48 224 48 192
|
||||
WIRE 336 240 208 240
|
||||
WIRE 336 256 336 240
|
||||
FLAG -64 192 Vi
|
||||
IOPIN -64 192 In
|
||||
FLAG 48 304 0
|
||||
FLAG 208 320 0
|
||||
FLAG 336 320 0
|
||||
FLAG 400 224 0
|
||||
FLAG 208 64 Vcc
|
||||
IOPIN 208 64 In
|
||||
FLAG 48 80 Vcc
|
||||
IOPIN 48 80 In
|
||||
FLAG -240 288 0
|
||||
FLAG -336 288 0
|
||||
FLAG -336 208 Vcc
|
||||
IOPIN -336 208 Out
|
||||
FLAG -240 208 Vi
|
||||
IOPIN -240 208 Out
|
||||
FLAG 448 144 Vo
|
||||
IOPIN 448 144 Out
|
||||
SYMBOL npn 144 144 R0
|
||||
SYMATTR InstName Q1
|
||||
SYMBOL cap 336 128 R90
|
||||
WINDOW 0 0 32 VBottom 2
|
||||
WINDOW 3 32 32 VTop 2
|
||||
SYMATTR InstName C1
|
||||
SYMATTR Value 1µ
|
||||
SYMBOL res 384 128 R0
|
||||
SYMATTR InstName R1
|
||||
SYMATTR Value 10k
|
||||
SYMBOL res 192 48 R0
|
||||
SYMATTR InstName R2
|
||||
SYMATTR Value 3.6k
|
||||
SYMBOL res 32 64 R0
|
||||
SYMATTR InstName R3
|
||||
SYMATTR Value 68k
|
||||
SYMBOL res 32 208 R0
|
||||
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|
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...
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l.22 ... \$93.43 at the time of close on May 10\th
|
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\documentclass{article}
|
||||
|
||||
\title{Electronics Stock Protfolio}
|
||||
\author{Aidan Sharpe}
|
||||
|
||||
\begin{document}
|
||||
\maketitle
|
||||
|
||||
\abstract{
|
||||
Over the course of the semester \$10,000 was evenly divided into 5 \$2,000 investments related to electronics. Starting on February 1\textsuperscript{st}, 2023 and ending at the time of close on May 10\textsuperscript{th}, a net loss of \$95.69. The idea was to mostly invest in long standing companies that have a more reliable track record. Funny enough, the biggest loss from the collections came from the youngest and least proven company.}
|
||||
|
||||
\section{Microsoft}
|
||||
I chose to invest in Microsoft since it has long been a reliable investment. Additionally, they have managed to avoid public contoversies for a long time while maintaining their status as a big tech company. On February 1\textsuperscript{st}, 2023, Microsoft was valued at \$80.48 per share. Following their overhaul of their "Bing" search engine to include GPT-4, Microsoft has risen in vauluation. On May 10\textsuperscript{th}, 2023, Microsoft closed at \$99.54. Starting with a \$2,000 investment, net profit would be \$473.66.
|
||||
|
||||
\section{Gitlab}
|
||||
Gitlab is an enterprise version managing tool. They are an alternative to Microsoft's Github, and they also offer a tool for self-hosting free and open source git repositories. On February 1\textsuperscript{st}, 2023, Gitlab was valued at \$54.15 per share. The next day, they hit their 4 month high at \$58.57. Unfortunately, Gitlab is down to \$30.30 at close on May 10\textsuperscript{th}, 2023. Starting with a \$2,000 investment, net loss is \$880.89. Since it is down so much, and Gitlab probably is not going anywhere, it is likely a good idea to hold.
|
||||
|
||||
\section{IBM}
|
||||
IBM has long been a power player in the realm of computing. Although they have not been front and center, they are still active and innovating. On February 1\textsuperscript{st}, 2023, IBM was valued at \$135.09 per share. On May 10\textsuperscript{th}, IBM was down to \$122.02. Again, starting with the baseline \$2,000 investment, net loss comes to \$193.50. Fortunately, IBM will likely remain an important part of computing for years to come, so by holding, a return on investment is probably ineveitable.
|
||||
|
||||
\section{Sony}
|
||||
Sony has been a long term innovator in electronic entertainment devices. On February 1\textsuperscript{st}, 2023, Sony was valued at \$89.55 per share, creeping up to \$93.43 at the time of close on May 10\th, 2023. All things considered, now would probably be a good time to sell for a net profit of \$86.66.
|
||||
|
||||
\section{General Electric}
|
||||
At over 130 years old, General Electric has broad reaches in electrical and electronic spaces. At the time of initial investment, General Electric was valued at \$82.32 per share. Luckily, choosing a longstanding complany payed off in this case, with GE closing at \$99.54 per share on May 10\textsuperscript{th}, 2023. With an initial \$2,000 investment, net profit from General Electric came to \$418.38.
|
||||
|
||||
\end{document}
|
19
4th-Semester-Spring-2023/Electronics/astable_multivibrator.cir
Executable file
@ -0,0 +1,19 @@
|
||||
astable multivibrator netlist
|
||||
.title Inverting OpAmp amplifier
|
||||
*file OpAmp.cir
|
||||
.include Lm358.mod
|
||||
XU1 4 3 1 2 6 Lm358/NS
|
||||
R1 Lm358 4 30k
|
||||
R2 4 5 100k
|
||||
C1 3 5 10u
|
||||
R3 3 Lm358 20k
|
||||
Vp 1 0 5
|
||||
Vn 2 0 -5
|
||||
Vgnd 5 0 0
|
||||
|
||||
.control
|
||||
tran 10u 600m 590m
|
||||
plot v(Lm358)
|
||||
.endc
|
||||
.end
|
||||
|
6
4th-Semester-Spring-2023/Embedded/.vscode/settings.json
vendored
Executable file
@ -0,0 +1,6 @@
|
||||
{
|
||||
"files.associations": {
|
||||
"stdbool.h": "c",
|
||||
"embedded_utils.h": "c"
|
||||
}
|
||||
}
|
BIN
4th-Semester-Spring-2023/Embedded/Final_Exam_IES_Spring 2023.docx
Executable file
BIN
4th-Semester-Spring-2023/Embedded/Lectures/Lecture01/.Jan19_CirArea.c.swp
Executable file
BIN
4th-Semester-Spring-2023/Embedded/Lectures/Lecture01/CirArea.out
Executable file
16
4th-Semester-Spring-2023/Embedded/Lectures/Lecture01/Jan19_CirArea.c
Executable file
@ -0,0 +1,16 @@
|
||||
#include <stdio.h>
|
||||
#define PI 3.141593
|
||||
|
||||
float circleArea(float radius);
|
||||
|
||||
int main()
|
||||
{
|
||||
float radius = 5;
|
||||
printf("Area of circle with radius %4.3f is %4.3f\n", radius, circleArea(radius));
|
||||
return 0;
|
||||
}
|
||||
|
||||
float circleArea(float radius)
|
||||
{
|
||||
return PI * radius * radius;
|
||||
}
|
12
4th-Semester-Spring-2023/Embedded/Lectures/Lecture01/Jan19_SubF.c
Executable file
@ -0,0 +1,12 @@
|
||||
#include <stdio.h>
|
||||
|
||||
float average(int a, int b, int c)
|
||||
{
|
||||
return (a + b + c) / 3.0;
|
||||
}
|
||||
|
||||
int main()
|
||||
{
|
||||
printf("%4.3f\n", average(4, 5, 6));
|
||||
return 0;
|
||||
}
|
BIN
4th-Semester-Spring-2023/Embedded/Lectures/Lecture01/Jan19_SubF.out
Executable file
28
4th-Semester-Spring-2023/Embedded/Lectures/Lecture05/Makefile
Executable file
@ -0,0 +1,28 @@
|
||||
ifndef $(MSPGCCDIR)
|
||||
MSPGCCDIR=$(HOME)/ti/msp430-gcc
|
||||
endif
|
||||
#paths
|
||||
INCLUDES_DIRECTORY = $(MSPGCCDIR)/include
|
||||
|
||||
DEVICE = msp430fr2355
|
||||
|
||||
# compiler options
|
||||
CC=$(MSPGCCDIR)/bin/msp430-elf-gcc
|
||||
|
||||
CFLAGS = -I . -I $(INCLUDES_DIRECTORY) -mmcu=$(DEVICE) -g -mhwmult=f5series
|
||||
LFLAGS = -L . -L $(INCLUDES_DIRECTORY)
|
||||
|
||||
# mspdebug driver -- used for installation
|
||||
DRIVER:= tilib
|
||||
|
||||
# Compiling
|
||||
all: main.elf
|
||||
|
||||
%.elf : %.c
|
||||
$(CC) $(CFLAGS) $(LFLAGS) $< -o $@
|
||||
|
||||
install: main.elf
|
||||
mspdebug $(DRIVER) "prog $<" --allow-fw-update
|
||||
|
||||
clean:
|
||||
rm -f *.o *.elf
|
62
4th-Semester-Spring-2023/Embedded/Lectures/Lecture05/notes.md
Executable file
@ -0,0 +1,62 @@
|
||||
# Intro to Embedded Systems Lecture Notes: January 31st, 2023
|
||||
|
||||
## POLLING
|
||||
|
||||
**Initialize the port**
|
||||
|
||||
Output:
|
||||
```c
|
||||
P6DIR |= BIT6;
|
||||
P6OUT &= ~BIT6;
|
||||
```
|
||||
Input:
|
||||
```c
|
||||
P4DIR &= ~BIT1;
|
||||
```
|
||||
Clear LOCKLPM5 (Lock low-power mode) from PMCTL0 (Power management control):
|
||||
```c
|
||||
PMCTL0 &= ~LOCKLPM5;
|
||||
```
|
||||
|
||||
Program the board
|
||||
|
||||
**Floating condition: not 1 or 0**
|
||||
Fix using pull-up/pull-down resistor
|
||||
|
||||
## PULL-UP / PULL-DOWN RESISTORS
|
||||
|
||||
**Pull-up resesistor**
|
||||
- Active Low
|
||||
- Mostly preferrable for MCUs
|
||||
- Safety -> reduces noise
|
||||
|
||||
**Pull-down resistor**
|
||||
- Active high
|
||||
|
||||
## I/O Configuration
|
||||
|
||||
|
||||
| P<sub>x</sub>DIR | P<sub>x</sub>REN | P<sub>x</sub>OUT | Comment |
|
||||
|-------|-------|-------|----------------|
|
||||
| 0 | 0 | X | Input |
|
||||
| 0 | 1 | 0 | Input with PDR |
|
||||
| 0 | 1 | 1 | Input with PUR |
|
||||
| 1 | X | X | Output |
|
||||
|
||||
## LOW POWER MODE
|
||||
|
||||
| SCG<sub>1 | SCG<sub>0 | OSC OFF | CPU OFF | Mode |
|
||||
|------|------|---------|---------|----------|
|
||||
| 0 | 0 | 0 | 0 | Active |
|
||||
| 0 | 0 | 0 | 1 | LPM0 |
|
||||
| 0 | 1 | 0 | 1 | LPM1 |
|
||||
| 1 | 0 | 0 | 1 | LPM2 |
|
||||
| 1 | 1 | 0 | 1 | LPM3 |
|
||||
| 1 | 1 | 1 | 1 | LPM4 |
|
||||
|
||||
## WHEN INTERRUPT HAPPENS
|
||||
- Processor stops what it's doing
|
||||
- Stores information to later resume
|
||||
- Executes interrupt service routine (ISR)
|
||||
- Restores saved information
|
||||
- Resumes execution
|
62
4th-Semester-Spring-2023/Embedded/Lectures/Lecture06/notes.md
Executable file
@ -0,0 +1,62 @@
|
||||
# Intro to Embedded Systems Lecture Notes: February 2nd, 2023
|
||||
|
||||
## Registers
|
||||
|
||||
|Reg Name|Function|
|
||||
|-------|-------|
|
||||
|P<sub>x</sub>SEL| Function select register
|
||||
|P<sub>x</sub>DIR | Whether input or output
|
||||
|P<sub>x</sub>OUT| Output value
|
||||
|P<sub>x</sub>IN| Input value
|
||||
|P<sub>x</sub>REN |Pull-up / Pull-down resistor
|
||||
|P<sub>x</sub>IE | Interrupt enable
|
||||
|P<sub>x</sub>IFG | Interrupt flag register
|
||||
|P<sub>x</sub>IES | Interrupt edge select register
|
||||
|
||||
|
||||
## P<sub>x</sub>SEL
|
||||
|
||||
|P<sub>x</sub>SEL1|P<sub>x</sub>SEL0| I/O Function
|
||||
|----|-----|----
|
||||
|0|0|General purpose I/O
|
||||
|0|1|ADC
|
||||
|1|0|Timer
|
||||
|1|1|Digital Communication (SPI / UART / I<sup>2</sup>C)
|
||||
|
||||
## Using P<sub>x</sub>SEL to Modify Behavior of P<sub>1.7</sub>
|
||||
|
||||
### GPIO Function
|
||||
```
|
||||
P1SEL1 &= ~BIT7;
|
||||
P1SEL0 &= ~BIT7;
|
||||
```
|
||||
|
||||
### ADC Function
|
||||
```
|
||||
P1SEL1 &= ~BIT7;
|
||||
P1SEL0 |= BIT7;
|
||||
```
|
||||
|
||||
### Timer Function
|
||||
```
|
||||
P1SEL1 |= BIT7;
|
||||
P1SEL0 &= ~BIT7;
|
||||
```
|
||||
|
||||
### SPI (Requires 4 Pins)
|
||||
```
|
||||
P1SEL1 |= 0xF0;
|
||||
P1SEL0 |= 0xF0;
|
||||
```
|
||||
|
||||
## Using P<sub>x</sub>IE, P<sub>x</sub>IFG, and P<sub>x</sub>IES
|
||||
|
||||
|Level Triggering | Edge Triggering |
|
||||
|--|--|
|
||||
|Signal asserted when high| Signal asseted on positive* edge
|
||||
|Signal not asserted when low|
|
||||
|
||||
\* positive edge only used when using positive edge triggering. Negative edge triggering also exists
|
||||
|
||||
|
||||
|
BIN
4th-Semester-Spring-2023/Embedded/Lectures/Lecture07/L#4-Interrupts_Polling.pptx
Executable file
54
4th-Semester-Spring-2023/Embedded/Lectures/Lecture07/notes.md
Executable file
@ -0,0 +1,54 @@
|
||||
# Intro to Embedded Systems Lecture Notes: February 7th, 2023
|
||||
|
||||
## Using Interrupts
|
||||
```c
|
||||
#define INTERRUPT_PINS 0x03
|
||||
|
||||
int main(void)
|
||||
{
|
||||
P4IE |= INTERRUPT_PINS; // Local interrupt enable
|
||||
P4IFG |= INTERRUPT_PINS;
|
||||
P4IES |= INTERRUPT_PINS;
|
||||
|
||||
_enable_interrupts(); // Global interrupt enable
|
||||
__bis_SR_register(GIE);
|
||||
|
||||
while (true)
|
||||
{
|
||||
...
|
||||
}
|
||||
return 0;
|
||||
}
|
||||
|
||||
// Port 4 interrupt service routine
|
||||
void __attribute__ ((interrupt(PORT4_VECTOR))) Port_4 (void)
|
||||
{
|
||||
...
|
||||
}
|
||||
```
|
||||
|
||||
## Interrupt Servicing Summary
|
||||
1. Interrupt Pending
|
||||
2. Complete Current Instruction
|
||||
3. Clear SR
|
||||
4. Retrieve starting address of ISR & put address in PC
|
||||
5. Execute ISR
|
||||
6. Pop SR and PC from stack
|
||||
7. Continue to main program
|
||||
|
||||
## Multiple Interrupts
|
||||
### Three Types:
|
||||
1. Reset Interrupt
|
||||
2. Maskable Interrupt
|
||||
- ADC, port, timer, e_USCI
|
||||
- User-asserted event
|
||||
3. Non-Maskable Interrupt
|
||||
- Fault, error detection
|
||||
- Oscillator fault
|
||||
- Flash key violation
|
||||
|
||||
## Priority of Interrupts
|
||||
1. Timers
|
||||
2. e_USCI
|
||||
3. ADC
|
||||
4. Port
|