VLSI notes week 1 lecture 2
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@@ -41,7 +41,7 @@ A transistor that is on passes a finite amount of current dependent on terminal
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\end{equation}
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\begin{figure}
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\centering
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\center
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\includegraphics[width=0.5\textwidth]{nmos-dimensions.png}
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\caption{nMOS dimensions}
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\label{fig:nmos-dimensions}
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@@ -80,4 +80,48 @@ Since pMOS transistors pass power rather than creating a ground connection, they
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\section{Capacitance}
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The gate capacitance per micron is typically about 2fF.
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\section{Logical Gate Truth Tables}
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\begin{table}[!h]
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\caption{Truth table of a NOT gate}
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%\label{tbl:truth-not}
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\begin{center}
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\begin{tabular}{c | c}
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in & out \\
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\hline
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1 & 0 \\
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0 & 1 \\
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\end{tabular}
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\end{center}
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\end{table}
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\begin{table}[!h]
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\caption{Truth table of a NAND gate}
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\begin{center}
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\begin{tabular}{c c | c}
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A & B & Y \\
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\hline
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0 & 0 & 1 \\
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0 & 1 & 1 \\
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1 & 0 & 1 \\
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1 & 1 & 0 \\
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\end{tabular}
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\end{center}
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\end{table}
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With the goal to set the correct output to $V_{DD}$ and GND, shorts must be avoided.
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Simple guides:
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\begin{enumerate}
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\item nMOS can only pass "0"
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\item pMOS can only pass "1"
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\item Always use pMOS in a pull-up network and nMOS in a pull-down network, with the output between them
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\item Only one of the two networks should be on at any given time
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\end{enumerate}
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\subsection{Implementing Arbitrary Functions}
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Realize the pull-down network by inspection (looking at the truth table), and then use deMorgan's theorem to manipulate.
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\ex{}
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{
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Given the function $F = \overline{A + BC}$, the pull-down network implements $A$ OR $B$ AND $C$. Keep in mind that MOSFETs in series have the effect of AND, and MOSFETs in parallel have the effect of OR. Next, use deMorgan's theorem to implement $\overline{A + BC}$ as a non-inverted function. This becomes $\bar{A} \cdot (\bar{B} + \bar{C})$. Finally, combine the pull-up and pull down networks.
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}
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\section{Nonideal Transistor Theory}
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\end{document}
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