VLSI notes week 1 lecture 2

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Aidan Sharpe
2024-09-05 15:14:50 -04:00
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@@ -41,7 +41,7 @@ A transistor that is on passes a finite amount of current dependent on terminal
\end{equation}
\begin{figure}
\centering
\center
\includegraphics[width=0.5\textwidth]{nmos-dimensions.png}
\caption{nMOS dimensions}
\label{fig:nmos-dimensions}
@@ -80,4 +80,48 @@ Since pMOS transistors pass power rather than creating a ground connection, they
\section{Capacitance}
The gate capacitance per micron is typically about 2fF.
\section{Logical Gate Truth Tables}
\begin{table}[!h]
\caption{Truth table of a NOT gate}
%\label{tbl:truth-not}
\begin{center}
\begin{tabular}{c | c}
in & out \\
\hline
1 & 0 \\
0 & 1 \\
\end{tabular}
\end{center}
\end{table}
\begin{table}[!h]
\caption{Truth table of a NAND gate}
\begin{center}
\begin{tabular}{c c | c}
A & B & Y \\
\hline
0 & 0 & 1 \\
0 & 1 & 1 \\
1 & 0 & 1 \\
1 & 1 & 0 \\
\end{tabular}
\end{center}
\end{table}
With the goal to set the correct output to $V_{DD}$ and GND, shorts must be avoided.
Simple guides:
\begin{enumerate}
\item nMOS can only pass "0"
\item pMOS can only pass "1"
\item Always use pMOS in a pull-up network and nMOS in a pull-down network, with the output between them
\item Only one of the two networks should be on at any given time
\end{enumerate}
\subsection{Implementing Arbitrary Functions}
Realize the pull-down network by inspection (looking at the truth table), and then use deMorgan's theorem to manipulate.
\ex{}
{
Given the function $F = \overline{A + BC}$, the pull-down network implements $A$ OR $B$ AND $C$. Keep in mind that MOSFETs in series have the effect of AND, and MOSFETs in parallel have the effect of OR. Next, use deMorgan's theorem to implement $\overline{A + BC}$ as a non-inverted function. This becomes $\bar{A} \cdot (\bar{B} + \bar{C})$. Finally, combine the pull-up and pull down networks.
}
\section{Nonideal Transistor Theory}
\end{document}